Infineon Technologies Ag

Ralf Staub

Norbert Urbansky

Jürgen Amon

Andreas Hilliger

Kae-Horng Wang

Matthias Krönke

Eike Lüken

A memory cell and method of forming the same is provided. To make contact between a bit line and a select transistor of a dynamic memory unit on a semiconductor wafer, a contact hole is filled with a metal or a metal alloy. A liner layer may be introduced between the semiconductor substrate and the metal filling. The semiconductor substrate has a doped region in the contact hole.

Method for fabricating metallic bit-line contacts

One (or more) contacts are produced on one or more active areas of a semiconductor wafer, it being possible for one or more isolated control lines to be arranged on the active areas with which contact is to be made. The control lines may, for example, be gate lines. The semiconductor component is fabricated in the following way: application of a polysilicon layer to the semiconductor wafer, patterning of the polysilicon layer, in order to produce a polysilicon contact above the active area, the polysilicon contact at least partly covering the two control lines, application of a first insulator layer to the semiconductor wafer, with the polysilicon contact being embedded, partial removal of the first insulator layer, so that at least the upper surface of the polysilicon contact is uncovered, and application of a metal layer to the semiconductor wafer in order to make electrical contact with the polysilicon contact.

Method for fabricating contacts for integrated circuits, and semiconductor component having such contacts

The invention relates to a method for producing an integrated circuit comprising the following steps: preparing a semi-conductor substrate () with a contacting circuit area (SS); providing an insulating layer (IS) on the surface of the semi-conductor substrate (): providing a contact hole (KL) in the insulating layer (IS) for making contacting the circuit area (SS); providing an insulating spacer area (') in at least the area above the contact hole (KL); providing at least three trenches (BG; BG; BG), the first (BG) of which is arranged next to the contact hole (KL), a second (BG) is disposed across the contact hole (KL) and a third (BG) is next to the contact hole (KL). The spacer area (&#x2032;) is placed between the first and the second trench (BG; BG) and the second and the third trench (BG; BG); filling the trenches (BG; BG; BG) with a conductive material; and chemical-mechanical polishing of conductive material for producing three separated trenches (BL; BL; BL).

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Dresden, Germany

Ralf Staub