Bühler Alzenau Gmbh

Gna Biosolutions Gmbh

Ralf Sperling

Dieter Heindl

Alfons Nichtl

Gunnar Raschke

Konrad Kuerzinger

Steffen Guertler

Wolfgang Parak

Mario Berlinger

Thomas A Klar

Konrad Kürzinger

Joachim A Stehr

Michael Wunderlich

Jochen Feldmann

Calin Hrelescu

A system is provided for in-situ ion beam etch rate or deposition rate measurement, including: a vacuum chamber; an ion beam source configured to direct an ion beam onto a first surface of a sample located within the vacuum chamber and to etch the first surface of the sample with an etch rate; or a material source configured to deposit material onto a first surface of a sample located within the vacuum chamber with a deposition rate; and an interferometric measurement device located at least partially within the vacuum chamber and configured to direct light onto a second surface of the sample and to determine the etch rate of the ion beam or the deposition rate of the deposited material in-situ based on light reflected from the sample.

In-situ etch rate or deposition rate measurement system

Growing community of inventors

Leipzig, Germany

Ralf Sperling