Infineon Technologies Austria Ag

Infineon Technologies Ag

Infineon Technologies Americas Corp.

Ralf Siemieniec

Oliver Blank

Franz Hirler

Dethard Peters

Michael Hutzler

Romain Esteve

Hans-Joachim Schulze

Wolfgang Bergner

David Laforet

Thomas Aichinger

Li Juin Yip

Cedric Ouvrard

Anton Mauder

Maximilian Roesch

Daniel Kueck

Martin Poelzl

Rudolf Elpelt

Roland Rupp

Jens Peter Konrath

Wolfgang Jantscher

Bernd Zippelius

David Kammerlander

Markus Zundel

Thomas Basler

Caspar Leendertz

Gilberto Curatola

Shiqin Niu

Uli Hiller

Josef Lutz

Christian Geissler

Joachim Weyers

Johannes Baumgartl

Ravi Keshav Joshi

Martin Henning Vielemeyer

Gerhard Noebauer

Michael Treu

Rudolf Berger

Joachim Krumrey

Stefan Sedlmaier

Paul Ellinghaus

Adam Amali

Florian Grasse

Franz-Josef Niedernostheide

Roman Baburske

Walter Rieger

Werner Schustereder

Rudolf Zelsacher

Olaf Storbeck

Peter Friedrichs

Michael Hell

Andrew Wood

Jan Ropohl

Harsh Naik

Mihai Draghici

Cédric Ouvrard

Mathias Born

Edward Fuergut

Francisco Javier Santos Rodriguez

Till Schloesser

Oliver Haeberlen

Peter Irsigler

Carsten Von Koblinski

Martin Gruber

Ingo Muri

Robert Paul Haase

Oliver Hellmund

Iris Moder

Frank Wolter

Matthias Kuenle

Uwe Kirchner

Georg Ehrentraut

Jochen Hilsenbeck

Stefan Kramp

Wolfgang Scholz

Christian Kampen

Heimo Hofer

Knut Stahrenberg

Larissa Wehrhahn-Kilian

Martin Pölzl

Gerhard Nöbauer

Ingmar Neumann

Guang Zeng

Karl-Heinz Bach

Maik Langner

Christian Foerster

Roland Moennich

Axel Koenig

Christian Strenger

Laszlo Juhasz

Mario Kleindienst

Karlheinz Feldrapp

Oliver Haeberlein

Markus Neuber

Ilja Pawel

A silicon carbide device includes a silicon carbide body with a trench gate structure that extends from a first surface into the silicon carbide body. A body region is in contact with an active sidewall of the trench gate structure. A source region is in contact with the active sidewall and located between the body region and the first surface. The body region includes a first body portion directly below the source region and distant from the active sidewall. In at least one horizontal plane parallel to the first surface, a dopant concentration in the first body portion is at least 150% of a reference dopant concentration in the body region at the active sidewall and a horizontal extension of the first body portion is at least 20% of a total horizontal extension of the body region.

Silicon carbide device with trench gate structure

The present disclosure relates to methods of manufacturing Ohmic contacts on a silicon carbide (SiC) substrate including providing a 4H—SiC or 6H—SiC substrate, implanting dopants into a surface region of the 4H—SiC or 6H—SiC substrate, annealing the implanted surface regions to form a 3C—SiC layer, and depositing a metal layer on the 3C—SiC layer. An implanting sequence of the implantation of dopants includes a plurality of plasma deposition acts with implantation energy levels including at least two different implantation energy levels. The implantation energy levels and one or more implantation doses of the plurality of plasma deposition acts are selected to form a 3C—SiC layer in the surface region of the 4H—SiC or 6H—SiC substrate during the annealing act. A method of manufacturing a semiconductor device having a structure including at least three layers including a 4H—SiC or 6H—SiC layer, a 3C—SiC layer, and a metal layer, by applying one or more of the techniques described herein, and semiconductor devices obtained with one or more of the techniques described herein are described.

Method of manufacturing ohmic contacts on a silicon carbide (SIC) substrate, method of manufacturing a semiconductor device, and semiconductor device

A semiconductor device includes a transistor cell with a source region of a first conductivity type and a gate electrode. The source region is formed in a wide bandgap semiconductor portion. A diode chain includes a plurality of diode structures. The diode structures are formed in the wide bandgap semiconductor portion and electrically connected in series. Each diode structure includes a cathode region of the first conductivity type and an anode region of a complementary second conductivity type. A gate metallization is electrically connected with the gate electrode and with a first one of the anode regions in the diode chain. A source electrode structure is electrically connected with the source region and with a last one of the cathode regions in the diode chain.

Semiconductor device with diode chain connected to gate metallization

A transistor device is provided. In an example, the transistor device includes a semiconductor body having a first main surface, a second main surface opposite to the first main surface. The transistor device further includes a transistor cell array including a plurality of transistor cells. The transistor cell array includes a first load electrode over the first main surface. The first load electrode is electrically connected to the plurality of transistor cells. The transistor cell array further includes a second load electrode over the second main surface. The second load electrode is electrically connected to the plurality of transistor cells. The plurality of transistor cells includes at least one control electrode including carbon.

Transistor device and method of manufacturing

In an example, a silicon carbide device includes a silicon carbide body. The silicon carbide body includes a central region and a peripheral region surrounding the central region. The central region includes a source region of a first conductivity type. The peripheral region includes a doped region of a second conductivity type. A stripe-shaped gate electrode extends through the central region and into the peripheral region. A contiguous source metallization is formed on the central region and on an inner portion of the peripheral region. The contiguous source metallization and the source region form a first ohmic contact in the central region. The contiguous source metallization and the doped region form a second ohmic contact in the peripheral region.

Silicon carbide device with stripe-shaped gate electrode and source metallization

In an example, for manufacturing a semiconductor device, first dopants are implanted through a first surface section of a first surface of a silicon carbide body. A trench is formed that extends from the first surface into the silicon carbide body. The trench includes a first sidewall surface and an opposite second sidewall surface. A spacer mask is formed. The spacer mask covers at least the first sidewall surface. Second dopants are implanted through a portion of a bottom surface of the trench exposed by the spacer mask. The first dopants and the second dopants have a same conductivity type. The first dopants and the second dopants are activated. The first dopants form a doped top shielding region adjoining the second sidewall surface. The second dopants form a doped buried shielding region adjoining the bottom surface.

Semiconductor device including trench gate structure and buried shielding region and method of manufacturing

A transistor cell includes a gate electrode and a source region of a first conductivity type. A drain/drift region is formed in a silicon carbide body. A buried region of the second conductivity type and the drain/drift region form a pn junction. The buried region and a well region form a unipolar junction. A mean net dopant density Nof the buried region is higher than a mean net dopant density Nof the well region. A first clamp region of the first conductivity type extends into the well region. A first low-resistive ohmic path electrically connects the first clamp region and the gate electrode. A second clamp region of the first conductivity type extends into the well region. A second low-resistive ohmic path electrically connects the second clamp region and the source region.

Silicon carbide device with transistor cell and clamp regions in a well region

A method includes providing a silicon carbide substrate, wherein a gate trench extends from a main surface of the silicon carbide substrate into the silicon carbide substrate and wherein a gate dielectric is formed on at least one sidewall of the gate trench, and forming a gate electrode in the gate trench, the gate electrode including a metal structure and a semiconductor layer between the metal structure and the gate dielectric.

Method of manufacturing semiconductor device with silicon carbide body

A silicon carbide device includes a transistor cell with a source region and a gate electrode. The source region is formed in a silicon carbide body and has a first conductivity type. A first low-resistive ohmic path electrically connects the source region and a doped region of a second conductivity type. The doped region and a floating well of the first conductivity type form a pn junction. A first clamp region having the second conductivity type extends into the floating well. A second low-resistive ohmic path electrically connects the first clamp region and the gate electrode.

Silicon carbide device with transistor cell and clamp region

A power semiconductor device includes a semiconductor substrate having a wide bandgap semiconductor material and a first surface, an insulation layer above the first surface of the semiconductor substrate, the insulation layer including at least one opening extending through the insulation layer in a vertical direction, a front metallization above the insulation layer with the insulation layer being interposed between the front metallization and the first surface of the semiconductor substrate, and a metal connection arranged in the opening of the insulation layer and electrically conductively connecting the front metallization with the semiconductor substrate; wherein the front metallization includes at least one layer that is a metal or a metal alloy having a higher melting temperature than an intrinsic temperature of the wide bandgap semiconductor material of the semiconductor substrate.

Silicon carbide device and method for forming a silicon carbide device

A method for producing a semiconductor component includes: forming a silicon carbide substrate having a body layer formed on a section of a main layer, and a source layer formed on a section of the body layer; forming gate trenches and contact trenches extending through the source layer and the body layer, the gate trenches and contact trenches alternating along a first horizontal direction parallel to a first main surface of the silicon carbide substrate; forming a gate dielectric in the gate trenches; forming a metal structure which includes first sections adjoining the gate dielectric in the gate trenches and second sections in the contact trenches, the second sections adjoining body regions formed from sections of the body layer and source regions formed from sections of the source layer; and removing third sections of the metal structure that connect the first sections to the second sections.

Method for producing a silicon carbide semiconductor component

A vertical power semiconductor transistor device includes: a drain region of a first conductivity type; a body region of a second conductivity type; a drift region of the first conductivity type which separates the body region from the drain region; a source region of the first conductivity type separated from the drift region by the body region; a gate trench extending through the source and body regions and into the drift region, the gate trench including a gate electrode; and a field electrode in the gate trench or in a separate trench. The drift region has a generally linearly graded first doping profile which increases from the body region toward a bottom of the trench that includes the field electrode, and a graded second doping profile that increases at a greater rate than the first doping profile from an end of the first doping profile toward the drain region.

MOSFET having a drift region with a graded doping profile and methods of manufacturing thereof

A semiconductor component includes a semiconductor component, including: a merged PiN Schottky (MPS) diode structure in a SiC semiconductor body having a drift zone of a first conductivity type; an injection region of a second conductivity type adjoining a first surface of the SiC semiconductor body; a contact structure at the first surface, the contact structure forming a Schottky contact with the drift zone and electrically contacting the injection region; and a zone of the first conductivity type formed between the injection region and a second surface of the SiC semiconductor body, the second surface being situated opposite the first surface. The zone is at a maximal distance of 1 &#x3bc;m from the injection region of the second conductivity type.

Semiconductor component having a diode structure in a SiC semiconductor body

A silicon carbide device includes a silicon carbide body having a hexagonal crystal lattice with a c-plane and with further main planes. The further main planes include a-planes and m-planes. A mean surface plane of the silicon carbide body is tilted to the c-plane by an off-axis angle. The silicon carbide body includes a columnar portion with column sidewalls. At least three of the column sidewalls are oriented along a respective one of the further main planes. A trench gate structure is in contact with the at least three of the column sidewalls.

Silicon carbide device with trench gate structure and method of manufacturing

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Villach, Austria

Ralf Siemieniec