Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V.

Albert-ludwigs-universitat Freiburg

Ralf Preu

Daniel Biro

Andreas Wolf

Florian Clement

Andreas Grohe

Ulrich Jager

Stefan Glunz

Sebastian Mack

Daniel Kray

Andreas Brand

Jan-Frederik Nekarda

Ansgar Mette

Jochen Rentsch

Kuno Mayer

Benjamin Thaidigsmann

Puzant Baliozian

Marc Hofmann

Elmar Lohmüller

Tobias Fellmeth

Nico Wöhrle

Pierre Saint-Cast

Ralf Lüdeman

Eric Schneiderlöchner

Monica Aleman

Johannes Seiffe

Anne-Kristin Volk

Gero Kastner

Ulrich JÄGER

Gero KÄSTNER

A a semiconductor component () having a front side and an opposite rear side and also side surfaces, and also at least one emitter () and at least one base (), wherein a pn junction () is formed between emitter () and base () and the emitter () extends parallel to the front and/or rear side. At least one side surface is a passivated separating surface (T), at which a separating surface passivation layer () is arranged, which has stationary charges having a surface charge density at the separating surface (T) with a magnitude of greater than or equal to 10cm-2. A method for singulating a semiconductor component () having a pn junction is also provided.

Semiconductor component and method for singulating a semiconductor component having a pn junction

The invention relates to a method for producing a photovoltaic solar cell having a front side designed for coupling in light, comprising the following method steps: A Producing a plurality of cutouts in a semiconductor substrate of a base doping type, B Producing one or more emitter regions of an emitter doping type at least at the front side of the semiconductor substrate, wherein the emitter doping type is opposite to the base doping type, C Applying an electrically insulating insulation layer and D Producing metallic feed through structures in the cutouts, at least one metallic base contact structure at the rear side of the solar cell, which is formed in an electrically conductive manner with the semiconductor substrate in a base doping region, at least one metallic front-side contact structure at the front side of the solar cell, which is formed in an electrically conductive manner with the emitter region at the front side of the semiconductor substrate, and at least one rear-side contact structure at the rear side of the solar cell, which is formed in a manner electrically conductively connected to the feed through contact structure. The invention is characterized in that in method step B and/or a further method step in addition a feed through emitter region of the emitter doping type extending from the front side to the rear side is formed in each case in the semiconductor substrate on the walls of the cutouts, in that in method step C the insulation layer is applied in a manner covering the rear side of the semiconductor substrate, if appropriate further intervening intermediate layers, in that in method step D the rear-side contact structure is applied to the insulation layer, if appropriate to further intermediate layers, in such a way that the rear-side contact structure extends to regions of the semiconductor substrate having base doping and, in these regions, on account of the intervening insulation layer, an electrical insulation is formed between rear-side contact structure and semiconductor substrate, and the base contact structure is applied to the insulation layer, if appropriate to further intermediate layers, in such a way that the base contact structure penetrates through the insulation layer at least in regions, such that an electrically conductive connection is produced between base contact structure and semiconductor substrate. The invention furthermore relates to a photovoltaic solar cell.

Photovoltaic solar cell and method for producing a photovoltaic solar cell

A method for producing a photovoltaic solar cell, including the following steps: A. texturizing a front () of a semiconductor substrate; B. generating a selective emitter doping on the front () of the semiconductor substrate by generating on the front () a first low-doped region () and a local high-doped region () within the first low-doped region; and C. applying at least one metal emitter contact structure to the front () of the semiconductor substrate, at least in the regions of local high doping, wherein, between method steps B and C, a respective silicon oxide layer () is generated in a method step Bsimultaneously on the front and back of the semiconductor substrate via thermal oxidation.

Method for producing a photovoltaic solar cell

A method for producing a selective doping structure in a semiconductor substrate in order produce a photovoltaic solar cell. The method includes the following steps: A) applying a doping layer () to the emitter side of the semiconductor substrate, B) locally heating a melting region of the doping layer () and a melting region of the semiconductor substrate lying under the doping layer () in such a way that dopant diffuses from the doping layer () into the melted semiconductor substrate via liquid-liquid diffusion, so that a high doping region () is produced after the melt mixture solidifies, C) producing the planar low doping region by globally heating the semiconductor substrate, D) removing the doping layer () and E) removing or converting a layer of the semiconductor substrate on the doping side in such a way that part of the low doping region and of the high doping region close to the surface is removed or is converted into an electrically non-conducting layer.

Method for producing a selective doping structure in a semiconductor substrate in order to produce a photovoltaic solar cell

A method for local contacting and local doping of a semiconductor layer including the following process steps: A) Generation of a layer structure on the semiconductor layer through i) application of at least one intermediate layer on one side of the semiconductor layer, and ii) application of at least one metal layer onto the intermediate layer last applied in step i), wherein the metal layer at least partly covers the last applied intermediate layer, B) Local heating of the layer structure in such a manner that in a local region a short-time melt-mixture of at least partial regions of at least the layers: metal layer, intermediate layer and semiconductor layer, forms. After solidification of the melt-mixture, a contacting is created between metal layer and semiconductor layer. It is essential that in step A) i) at least one intermediate layer designed as dopant layer is applied, which contains a dopant wherein the dopant has a greater solubility in the semiconductor layer than the metal of the metal layer.

Method for local contacting and local doping of a semiconductor layer

The invention relates to a method for the precision processing of substrates, in particular for the microstructuring of thin layers, local dopant introduction and also local application of a metal nucleation layer in which a liquid-assisted laser, i.e. laser irradiation of a substrate which is covered in the regions to be processed by a suitable reactive liquid, is implemented.

Method for the precision processing of substrates

A method of electrically contacting a semiconductor layer () coated with at least one dielectic layer () which is coated with a metal layer the metal layer () is applied on the dielectric layer () and the metal layer () is temporarily locally heated in a line, linear or dotted pattern by means of a source of radiation () in a controlled manner in such a way that a local molten mixture, is formed consisting exclusively of the metal layer (), the dielectric layer () and the semiconductor layer () are located directly underneath the metal layer () and upon solidification, leads to an electrical contact between the semiconductor layer () and the metal layer ().

Method of producing a semiconductor-metal contact through a dielectric layer

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Freiburg, Germany

Ralf Preu