Carl Zeiss Smt Gmbh

Carl-zeiss-smt Ag

Ralf Mueller

Toralf Gruner

Michael Totzeck

Daniel Kraehmer

Wolfgang Singer

Alexander Epple

Ulrich Loering

Hans-Juergen Mann

Damian Fiolka

Michael Patra

Sascha Bleidistel

Aksel Goehnermeier

Christoph Zaczek

Olaf Conradi

Andras G Major

Dirk Juergens

Christian Wald

Wilhelm Ulrich

Heiko Feldmann

Martin Endres

Johannes Ruoff

Hans-Juergen Rostalski

Jochen Hetzler

Thomas Schicketanz

Stig Bieling

Hans-Jochen Paul

Norman Baer

Vladan Blahnik

A catadioptric projection objective for images an object field onto an image field via imaging radiation. The projection objective includes at least one reflective optical component and a measuring device. The reflective optical component, during the operation of the projection objective, reflects a first part of the imaging radiation and transmits a second part of the imaging radiation. The reflected, first part of the imaging radiation at least partly contributes to the imaging of the object field. The transmitted, second part of the imaging radiation is at least partly fed to a measuring device. This allows a simultaneous exposure of the photosensitive layer at the location of the image field with the imaging radiation and monitoring of the imaging radiation with the aid of the measuring device.

Catadioptric projection objective including a reflective optical component and a measuring device

An illumination system for EUV projection lithography has a beam shaping optical unit for generating an EUV collective output beam from an EUV raw beam of a synchrotron-radiation-based light source. An output coupling optical unit serves for generating a plurality of EUV individual output beams from the EUV collective output beam. In each case a beam guiding optical unit serves for guiding the respective EUV individual output beam toward an object field in which a lithography mask is arrangable. The result is an illumination system with which EUV light of a synchrotron-radiation-based light source is guided to the greatest possible extent without losses and at the same time flexibly.

Illumination system for EUV projection lithography

A method of operating a projection exposure tool for microlithography is provided. The projection exposure tool has a projection objective for imaging object structures on a mask into an image plane using electromagnetic radiation, during which imaging the electromagnetic radiation causes a change in optical properties of the projection objective. The method comprises the steps of: providing the layout of the object structures on the mask to be imaged and classifying the object structures according to their type of structure, calculating the change in the optical properties of the projection objective effected during the imaging process on the basis of the classification of the object structures, and using the projection exposure tool for imaging the object structures into the image plane, wherein the imaging behavior of the projection exposure tool is adjusted on the basis of the calculated change of the optical properties in order to at least partly compensate for the change of the optical properties of the projection objective caused by the electromagnetic radiation during the imaging process.

Method of operating a projection exposure tool for microlithography

An imaging optical unit for imaging an object field in an image field is disclosed. The imaging optical unit has an obscured pupil. This pupil has a center, through which a chief ray of a central field point passes. The imaging optical unit furthermore has a plurality of imaging optical components. A gravity center of a contiguous pupil obscuration region of the imaging optical unit lies decentrally in the pupil of the imaging optical unit.

Imaging optical unit and projection exposure apparatus for projection lithography, having such imaging optical unit

An illumination optical unit for EUV projection lithography serves to illuminate an object field with illumination light. A transmission optical unit images field facets in a manner superposed on one another into the object field via illumination channels, which each have assigned to them one of the field facets and one pupil facet of a pupil facet mirror. The superposition optical unit has at least two mirrors for grazing incidence, downstream of the pupil facet mirror. The mirrors for grazing incidence produce an illumination angle bandwidth of an illumination light overall beam, composed of the illumination channels, in the object field. The bandwith is smaller for a plane of incidence parallel to the object displacement direction than for a plane perpendicular thereto. The result can be an illumination optical unit, by which a projection optical unit can be adapted to a configuration of an EUV light source for the illumination light.

Illumination optical unit for EUV projection lithography

A mirror (M) of a projection exposure apparatus for microlithography configured for structured exposure of a light-sensitive material and a method for producing a mirror (M). The mirror (M) has a substrate body (B), a first mirror surface (S) and a second mirror surface (S'). The first mirror surface (S) is formed on a first side (VS) of the substrate body (B). The second mirror surface (S&#x2032;) is formed on a second side (RS) of the substrate body (B), the second side being different from the first side of the substrate body (B). The mirror (M) may be embodied, in particular, such that the substrate body (B) is produced from a glass ceramic material.

Mirror of a projection exposure apparatus for microlithography with mirror surfaces on different mirror sides, and projection exposure apparatus

An imaging optical system for EUV projection lithography has a plurality of mirrors for imaging an object field in an object plane into an image field in an image plane. An image-side numerical aperture of the imaging optical system is at least 0.3. The imaging optical system has a pupil obscuration which is greater than 0.40 and an image filed size of at least 1 mm&#xd7;10 mm. The imaging optical system can provide high quality imaging of the object.

Imaging optical system

An imaging optics includes a plurality of mirrors which reflect imaging light to image an object field in an object plane into an image field in an image plane. A mirror body of at least one of the mirrors has a through-opening for the imaging light to pass through. The through-opening has an internal region of a smallest opening width in the mirror body. The through-opening expands from the internal region towards both edge regions of the mirror body. A disturbing influence of unused light portions is reduced or eliminated completely.

Imaging optics

An illumination system of a microlithographic projection exposure apparatus includes a beam deflection array including a number beam deflection elements, for example mirrors. Each beam deflection element is adapted to deflect an impinging light beam by a deflection angle that is variable in response to control signals. The light beams reflected from the beam deflection elements produce spots in a system pupil surface. The number of spots illuminated in the system pupil surface during an exposure process, during which a mask is imaged on a light sensitive surface, is greater than the number of beam deflection elements. This may be accomplished with the help of a beam multiplier unit that multiplies the light beams reflected from the beam deflection elements. In another embodiment the beam deflecting elements are controlled such that the irradiance distribution produced in the system pupil surface changes between two consecutive light pulses of an exposure process.

Illumination system of a microlithographic projection exposure apparatus

Projection objectives, projection exposure apparatuses and related systems and components are disclosed.

Projection objective and projection exposure apparatus for microlithography

A projection objective has an object surface and an image surface. The projection objective includes a plurality of optical elements arranged along an optical axis and configured so that during operation the projection objective images a pattern arranged in the object surface onto the image surface. The optical elements include a concave mirror a first deflecting mirror and a second deflecting mirror. The first deflecting mirror is tilted relative to the optical axis by a first tilt angle, t, about a first tilt axis so that during operation the first deflecting mirror deflects light at a wavelength &#x3bb; from the object surface towards the concave mirror or deflects light at &#x3bb; from the concave mirror towards the image surface. The second deflecting mirror is tilted relative to the optical axis by a second tilt angle, t, about a second tilt axis. For a pattern including a grating having a line width of 45 nm and a pitch, p, the projection objective images the pattern to the image surface such that for a first orientation of the pattern and a second orientation of the pattern a difference, &#x394;HV, between the imaged line width is 1.2 nm or less for 100 nm&#x3c;p&#x3c;1,000 nm, where the grating lines in the first orientation are orthogonal to the grating lines in the second orientation.

Catadioptric projection objective with tilted deflecting mirrors, projection exposure apparatus, projection exposure method, and mirror

The disclosure provides an optical system having an optical axis, where the optical system includes a polarization manipulator which includes first and second subelements. The first subelement has a non-planar, optically effective surface. For light passing through the first subelement, the first subelement causes a change in the polarization state. A maximum effective retardation introduced by the first subelement along the optical axis is less than a quarter of the working wavelength of the optical system. The first subelement and the second subelement have mutually facing surfaces which are mutually complementary. The optical system also includes a position manipulator to manipulate the relative position of the first and second subelements.

Growing community of inventors

Aalen, Germany

Ralf Mueller