Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V.

Ralf Lüdeman

Ralf Preu

Stefan Glunz

Eric Schneiderlöchner

A method of electrically contacting a semiconductor layer () coated with at least one dielectic layer () which is coated with a metal layer the metal layer () is applied on the dielectric layer () and the metal layer () is temporarily locally heated in a line, linear or dotted pattern by means of a source of radiation () in a controlled manner in such a way that a local molten mixture, is formed consisting exclusively of the metal layer (), the dielectric layer () and the semiconductor layer () are located directly underneath the metal layer () and upon solidification, leads to an electrical contact between the semiconductor layer () and the metal layer ().

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Freiburg, Germany

Ralf Lüdeman