Applied Materials, Inc.

Rakesh Ramadas

Tsutomu Tanaka

Dmitry A Dzilno

Gregory J Wilson

Jared Ahmad Lee

Ashutosh Agarwal

Sriharish Srinivasan

Li-Qun Xia

John C Forster

Sanjeev Baluja

Muhannad Mustafa

Dhritiman Subha Kashyap

Mario Dave Silvetti

Kenichi Ohno

Keiichi Tanaka

Alexander Viktorovich Garachtchenko

Youngki Chang

Mike Murtagh

Kwok Feng Wong

Shashidhara Patel H B

Gas mixer

The disclosure describes a plasma source assemblies comprising a differential screw assembly, an RF hot electrode, a top cover, an upper housing and a lower housing. The differential screw assembly is configured to provide force to align the plasma source assembly vertically matching planarity of a susceptor. More particularly, the differential screw assembly increases a distance between the top cover and the upper housing to align the gap with the susceptor. The disclosure also provides a better thermal management by cooling fins. A temperature capacity of the plasma source assemblies is extended by using titanium electrode. The disclosure provides a cladding material covering a portion of a first surface of RF hot electrode, a second surface of RF hot electrode, a bottom surface of RF hot electrode, a portion of a surface of the showerhead and a portion of lower housing surface.

Vertically adjustable plasma source

Methods for aligning a processing chamber using a centering ring and processing chambers having the centering ring are describes. The method includes determining an average central position for the centering ring based on the concentricity of the centering with the support surfaces and adjusting average position of centering ring to a final position based on the average central position.

Apparatus and methods for processing chamber lid concentricity alignment

Apparatus and methods for depositing and treating or etching a film are described. A batch processing chamber includes a plurality of processing regions with at least one plasma processing region. A low frequency bias generator is connected to a susceptor assembly to intermittently apply a low frequency bias to perform a directional treatment or etching the deposited film.

Geometrically selective deposition of dielectric films utilizing low frequency bias

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Santa Clara, CA, United States of America

Rakesh Ramadas