Samsung Electro-mechanics Co., Ltd.

Samsung Electronics Co., Ltd.

Samsung Led Co., Ltd.

The University of Tokushima

Rak Jun Choi

Sakai Shiro

Naoi Yoshiki

Soo Min Lee

Masayoshi Koike

Cheol Soo Sone

Sung Hwan Jang

Hun Jae Chung

There is provided a nitride semiconductor light emitting device. A nitride semiconductor light emitting device according to an aspect of the invention may include: an n-type nitride semiconductor layer provided on a substrate; an active layer provided on the n-type nitride semiconductor layer, and including quantum barrier layers and quantum well layers; and a p-type nitride semiconductor layer provided on the active layer, wherein each of the quantum barrier layers includes a plurality of InGaN layers (0&#x3c;x&#x3c;1) and at least one AlGaN layer (0&#x2266;y&#x3c;1), and the AlGaN layer is stacked between the InGaN layers.

Nitride semiconductor light emitting device

Disclosed herein is a high-quality group III-nitride semiconductor thin film and group III-nitride semiconductor light emitting device using the same. To obtain the group III-nitride semiconductor thin film, an AlInN buffer layer is formed on a (1-102)-plane (so called r-plane) sapphire substrate by use of a MOCVD apparatus under atmospheric pressure while controlling a temperature of the substrate within a range from 850 to 950 degrees Celsius, and then, GaN-based compound, such as GaN, AlGaN or the like, is epitaxially grown on the buffer layer at a high temperature. The group III-nitride semiconductor light emitting device is fabricated by using the group III-nitride semiconductor thin film as a base layer.

Group III-nitride semiconductor thin film, method for fabricating the same, and group III-nitride semiconductor light emitting device

The invention provides a method of growing a non-polar a-plane gallium nitride. In the method, first, an r-plane substrate is prepared. Then, a low-temperature nitride-based nucleation layer is deposited on the substrate. Finally, the non-polar a-plane gallium nitride is grown on the nucleation layer. In growing the non-polar a-plane gallium nitride, a gallium source is supplied at a flow rate of about 190 to 390 &#x3bc;mol/min and the flow rate of a nitrogen source is set to produce a V/III ratio of about 770 to 2310.

Method of growing non-polar a-plane gallium nitride

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Tokushima, Japan

Rak Jun Choi