Maxim Integrated Products, Inc.

Lumileds LLC

Koninklijke Philips Corporation N.v.

Rajwinder Singh

Marco A Zuniga

Adam Brand

Badredin Fatemizadeh

Tom K Castro

John Edward Epler

John Xia

Chi-Nung Ni

Min Xu

A lateral double-diffused metal-oxide-semiconductor transistor includes a silicon semiconductor structure and a vertical gate. The vertical gate include a (a) gate conductor extending from a first outer surface of the silicon semiconductor structure into the silicon semiconductor structure and (b) a gate dielectric layer including a least three dielectric sections. Each of the at least three dielectric sections separates the gate conductor from the silicon semiconductor structure by a respective separation distance, where each of the respective separation distances is different from each other of the respective separation distances.

LDMOS transistors including vertical gates with multiple dielectric sections, and associated methods

The structural characteristics of the light-exiting surface of a light emitting device are controlled so as to increase the light extraction efficiency of that surface when the surface is roughened. A light emitting surface comprising layers of materials with different durability to the roughening process exhibits a higher light extraction efficiency than a substantially uniform light emitting surface exposed to the same roughening process. In a GaN-type light emitting device, a thin layer of AlGaN material on or near the light-exiting surface creates sharper features after etching compared to the features created by conventional etching of a surface comprising only GaN material.

Light extraction using feature size and shape control in LED surface roughening

A lateral double-diffused metal-oxide-semiconductor (LDMOS) transistor includes a silicon semiconductor structure and a vertical gate. The vertical gate includes (a) a first gate conductor and a second gate conductor each extending from a first outer surface of the silicon semiconductor structure into the silicon semiconductor structure in a thickness direction, (b) a first separation dielectric layer separating the first gate conductor from the second gate conductor within the vertical gate, and (c) a gate dielectric layer separating each of the first gate conductor and the second gate conductor from the silicon semiconductor structure.

Transistors with dual gate conductors, and associated methods

A dual-gate, self-aligned lateral double-diffused metal-oxide-semiconductor (LDMOS) transistor includes a silicon semiconductor structure, a lateral gate including a first dielectric layer and a first conductive layer stacked on the silicon semiconductor structure in a thickness direction, and a vertical gate. The vertical gate includes a second dielectric layer and a second conductive layer disposed in a trench of the silicon semiconductor structure, the second dielectric layer defining an edge of the lateral gate in a lateral direction. A method for forming a dual-gate, self-aligned LDMOS transistor includes (a) forming a vertical gate of the LDMOS transistor in a trench of a silicon semiconductor structure and (b) defining a lateral edge of a lateral gate of the LDMOS transistor using the vertical gate.

Self-aligned, dual-gate LDMOS transistors and associated methods

The structural characteristics of the light-exiting surface of a light emitting device () are controlled so as to increase the light extraction efficiency of that surface () when the surface is roughened. A light emitting surface () comprising layers of materials with different durability to the roughening process exhibits a higher light extraction efficiency than a substantially uniform light emitting surface exposed to the same roughening process. In a GaN-type light emitting device (), a thin layer () of AlGaN material on or near the light-exiting surface () creates sharper features after etching compared to the features created by conventional etching of a surface comprising only GaN material.

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Pleasanton, CA, United States of America

Rajwinder Singh