Invisage Technologies, Inc.

Rajsapan Jain

Edward Hartley Sargent

Hui Tian

Igor C Ivanov

Jess Jan Young Lee

Michael Ross Malone

Pierre Henri Rene Della Nave

Michael Charles Brading

In various embodiments, a photodetector includes a semiconductor substrate and a plurality of pixel regions. Each of the plurality of pixel regions comprises an optically sensitive layer over the semiconductor substrate. A pixel circuit is formed for each of the plurality of pixel regions. Each pixel circuit includes a pinned photodiode, a charge store, and a read out circuit for each of the plurality pixel regions. The optically sensitive layer is in electrical communication with a portion of a silicon diode to form the pinned photodiode. A potential difference between two electrodes in communication with the optically sensitive layer associated with a pixel region exhibits a time-dependent bias; a biasing during a first film reset period being different from a biasing during a second integration period.

Photodetector comprising a pinned photodiode that is formed by an optically sensitive layer and a silicon diode

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Menlo Park, CA, United States of America

Rajsapan Jain