Air Products and Chemicals, Inc.

Versum Materials Us, LLC

Rajiv Krishan Agarwal

Yi-Chia Lee

Tianniu Chen

Madhukar Bhaskara Rao

William Jack Casteel, Jr

Wen Dar Liu

Howard P Withers, Jr

James Joseph Hart

Sai-Hong Andrew Lo

Joseph T Sluzevich

Charles G Coe

Ravi Kumar Laxman

Aiping Wu

Gene Everad Parris

John Frederick Cirucci

Daniel Joseph Tempel

David Barry Rennie

John Francis Lehmann

Wei Cao

George L Ryals

Mark Richard Brown

Yin Pang Tsui

Robert W Apollo

Daniel McNesby

Thomas Elwood Zellner

Yi-chia Lee

Charles Gardner Coe

William Jack Casteel Jr

Jr Howard Paul Withers

Composition, method and system for PVD TiN hard mask removal from 28/20 nm pattern wafers have been disclosed. The composition uses peroxide as oxidizing agent for PVD TiN hard mask removal under slightly basic conditions. The composition comprises bulky or long chain organic amines or polyalkylamine to improve removal/etching selectivity of PVD TiN vs CVD TiN. The composition further comprises long chain organic acids or amines to maintain Co compatibility.

TiN hard mask and etch residue removal

A photoresist or semiconductor manufacturing residue stripping and cleaning composition comprising water, one or more alkaline compounds, one or more corrosion inhibitors, and one or more oxidized products of one or more antioxidants, the method of making the composition and the method of using the composition.

Semi-aqueous photoresist or semiconductor manufacturing residue stripping and cleaning composition with improved silicon passivation

TiN hard mask and etch residual removal

The method described herein provides a method for preparing trisilylamine. In one aspect, the method comprises: providing a reaction mixture of trisilylamine and monochlorosilane into a reactor wherein the reaction mixture is at a temperature and pressure sufficient to provide trisilylamine in a liquid phase wherein the reaction mixture is substantially free of an added solvent; contacting the reaction mixture with ammonia to provide a crude mixture comprising trisilylamine and an ammonium chloride solid wherein monochlorosilane is in stoichiometric excess in relation to ammonia; purifiying the crude mixture to provide trisilylamine wherein the trisilyamine is produced at purity level of 90% or greater; and optionally removing the ammonium chloride solid from the reactor.

Process for making trisilylamine

The method described herein provides a method for preparing a chlorinated silane at least one end product comprising SiHCl, SiHCl, and combinations thereof in molar yields of 50% or greater with respect to silane in the feed stream. The method described herein therefore provides an end product comprising the one or more chlorinated silanes by contacting reaction mixture comprising silane and hydrogen chloride with a catalyst at a temperature and time sufficient to provide the end product.

Method for making a chlorosilane

Method for the purification of a volatile metal hydride comprising obtaining a volatile metal hydride feed containing one or more acidic impurities, one of which is a sulfur-containing impurity; contacting the feed with an alkaline material and reacting at least a portion of the sulfur-containing impurity with the alkaline material to remove a portion of the sulfur-containing impurity from the feed and provide an intermediate purified material, wherein the contacting of the feed with an alkaline material is effected at a sub-ambient temperature; and contacting the intermediate purified product with an adsorbent material to remove at least a portion of the sulfur-containing impurity from the intermediate purified material and provide a purified volatile metal hydride product.

Removal of sulfur-containing impurities from volatile metal hydrides

A process for synthesizing an aminosilane compound such as bis(tertiarybutylamino)silane is provided. In one aspect of the present invention, there is provided a process for making bis(tertiarybutylamino)silane comprising reacting a stoichiometric excess of tert-butylamine with dichlorosilane under anhydrous conditions sufficient such that a liquid comprising the bis(tertiarybutylamino)silane product is produced.

Process for the production and purification of bis(tertiary-butylamino)silane

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Malvern, PA, United States of America

Rajiv Krishan Agarwal