Northrop Grumman Systems Corporation

USA As Represented by Secretary of the Navy

University of California

Rajinder S Sandhu

Vincent Gambin

Karl D Hobart

Travis J Anderson

Marko J Tadjer

Andrew D Koehler

Joshua D Caldwell

Tatyana I Feygelson

Michael Wojtowicz

Ioulia Smorchkova

Bradford B Pate

Mark Goorsky

Benjamin Poust

Gregory Todd Lewis

Jeff McKay

Eugene I Imhoff

A method for fabricating a semiconductor device, such as a GaN high electron mobility transistor (HEMT) device, including etching a thermal via into a back-side of a semiconductor substrate and depositing a diamond nucleation seed layer across the back-side of the substrate. The method further includes coating the diamond nucleation with a mask layer and removing mask material outside of the thermal via on the planar portions of the back-side of the substrate. The method includes removing portions of the diamond nucleation layer on the planar portions and then removing the remaining portion of the mask material in the thermal via. The method then includes depositing a bulk diamond layer within the thermal via on the remaining portion of the diamond nucleation layer so that diamond only grows in the thermal via and not on the planar portions of the substrate.

Selective deposition of diamond in thermal vias

A GaN high electron mobility transistor (HEMT) device having a silicon carbide substrate including a top surface and a bottom surface, where the substrate further includes a via formed through the bottom surface and into the substrate. The device includes a plurality of epitaxial layers provided on the top surface of the substrate, a plurality of device layers provided on the epitaxial layers, and a diamond layer provided within the via.

Direct growth of diamond in backside vias for GaN HEMT devices

Growing community of inventors

Castaic, CA, United States of America

Rajinder S Sandhu