Purdue Research Foundation

Sandia Corporation

Rajib Rahman

Gerhard Klimeck

Hesameddin Ilatikhameneh

Tarek Ameen Beshari

Bozidar Novakovic

Malcolm Carroll

Anand Ganti

Ezra Bussmann

James Ewers Levy

Noah Tobias Jacobson

Wayne Witzel

Stephen M Carr

Erik Nielsen

Robin J Blume-Kohout

Andrew J Landahl

Michael Lilly

Khoi Thi Nguyen

Nathaniel Bishop

A tunnel field effect transistor (TFET) device includes a substrate, heavily doped source and drain regions disposed at opposite ends of a channel region forming a PiN or NiP structure, the channel region including a first substantially parallelogram portion having a first length defined along a longitudinal axis extending from the source region to the drain region and a second substantially parallelogram portion having a second length defined along the longitudinal axis larger than the first length, the TFET device having an effective channel length that is an average of the first and second lengths. The channel region includes a channel material with a first effective mass along a longitudinal axis extending from the source region to the drain region and a second effective mass along a lateral axis perpendicular to the longitudinal axis, the first effective mass being greater than the second effective mass.

Tunnel field effect transistor having anisotropic effective mass channel

A tunnel field effect transistor (TFET) includes a substrate, heavily doped source and drain regions disposed at opposite ends of a channel region forming a PiN or NiP structure, the channel region including a first substantially parallelogram portion having a first length defined along a longitudinal axis extending from the source region to the drain region and a second substantially parallelogram portion having a second length defined along the longitudinal axis larger than the first length, the TFET device having an effective channel length that is an average of the first and second lengths. The channel region includes a channel material with a first effective mass along a longitudinal axis extending from the source region to the drain region and a second effective mass along a lateral axis perpendicular to the longitudinal axis, the first effective mass being greater than the second effective mass.

A quantum computing device that includes a plurality of semiconductor adiabatic qubits is described herein. The qubits are programmed with local biases and coupling terms between qubits that represent a problem of interest. The qubits are initialized by way of a tuneable parameter, a local tunnel coupling within each qubit, such that the qubits remain in a ground energy state, and that initial state is represented by the qubits being in a superposition of |0&#x3e; and |1&#x3e; states. The parameter is altered over time adiabatically or such that relaxation mechanisms maintain a large fraction of ground state occupation through decreasing the tunnel coupling barrier within each qubit with the appropriate schedule. The final state when tunnel coupling is effectively zero represents the solution state to the problem represented in the |0&#x3e; and |1&#x3e; basis, which can be accurately read at each qubit location.

Semiconductor adiabatic qubits

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West Lafayette, IN, United States of America

Rajib Rahman