Applied Materials, Inc.

Rajib Lochan Swain

Seshadri Ganguli

Sang Ho Yu

Sanjay S Natarajan

Gill Yong Lee

Sung-Kwan Kang

Priyadarshi Panda

Jorge Pablo Fernandez

Methods of forming memory devices are described. Some embodiments of the disclosure utilize a low temperature anneal process to reduce bottom voids and seams in low melting point, low resistance metal buried word lines. Some embodiments of the disclosure utilize a high density dielectric cap during a high temperature anneal process to reduce bottom voids in buried word lines.

Method of testing a gap fill for DRAM

Gap fill methods of forming buried word lines in DRAM without forming bottom voids

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Sunnyvale, CA, United States of America

Rajib Lochan Swain