Corning Incorporated

Rajesh Vaddi

Robert George Manley

Prantik Mazumder

Mandakini Kanungo

Sean Matthew Garner

Scott Christopher Pollard

Ah-Young Park

Chukwudi Azubuike Okoro

Robert Alan Bellman

Timothy James Orsley

Kaveh Adib

Lu Zhang

Jiangwei Feng

Richard Curwood Peterson

Michael Lesley Sorensen

Jen-Chieh Lin

Pei-Lien Tseng

Philip Simon Brown

Bin Zhu

Garrett Andrew Piech

Chad Byron Moore

Ming-Huang Huang

Tian Huang

Ekaterina Aleksandrovna Kuksenkova

Karan Mehrotra

Daniel Wayne Levesque, Jr

Nikolay Zhelev Zhelev

Heather Nicole Vanselous

Robert Bumju Lee

Barry James Paddock

According to various embodiments described herein, an article comprises a glass or glass-ceramic substrate having a first major surface and a second major surface opposite the first major surface, and a via extending through the substrate from the first major surface to the second major surface over an axial length in an axial direction. The article further comprises a helium hermetic adhesion layer disposed on the interior surface; and a metal connector disposed within the via, wherein the metal connector is adhered to the helium hermetic adhesion layer. The metal connector coats the interior surface of the via along the axial length of the via to define a first cavity from the first major surface to a first cavity length, the metal connector comprising a coating thickness of less than 12 μm at the first major surface. Additionally, the metal connector coats the interior surface of the via along the axial length of the via to define a second cavity from the second major surface to a second cavity length, the metal connector comprising a coating thickness of less than 12 μm at the second major surface and fully fills the via between the first cavity and the second cavity.

Hermetic metallized via with improved reliability

Embodiments are related to systems and methods for forming vias in a substrate, and more particularly to systems and methods for reducing substrate surface disruption during via formation.

Systems and methods for reducing via formation impact on electronic device formation

A thin film transistor (TFT) liquid crystal display (LCD) comprises a plurality of image pixels demarcated between an overlying liquid crystal display layer and an underlying glass substrate. Each image pixel comprises a dedicated top-gate TFT disposed over the glass substrate. Each top-gate thin film transistor comprises a process sensitive semiconductor layer disposed over the glass substrate, and a source electrode and a drain electrode disposed over the process sensitive semiconductor layer. The process sensitive semiconductor layer forms a process sensitive semiconductor active layer between the source electrode and the drain electrode and an active layer protection film is disposed over the process sensitive semiconductor active layer. A gate dielectric layer is disposed over the active layer protection film between the source electrode and the drain electrode and a gate electrode is disposed over the gate dielectric layer.

Methods for forming thin film transistors on a glass substrate and liquid crystal displays formed therefrom

Display tiles comprising pixel elements on a first surface of a substrate connected by an electrode, a driver located opposite the first surface, and a connector wrapped around an edge surface of the substrate connecting the driver to the pixel elements. Displays comprised of display tiles and methods of manufacturing display tiles and displays are also disclosed.

Bezel-free display tile with edge-wrapped conductors and methods of manufacture

A method of manufacturing a glass article comprises: (A) forming a first layer of catalyst metal on a glass substrate; (B) heating the glass substrate; (C) forming a second layer of an alloy of a first metal and a second metal on the first layer; (D) heating the glass substrate, thereby forming a glass article comprising: (i) the glass substrate; (ii) an oxide of the first metal covalently bonded thereto; and (iii) a metallic region bonded to the oxide, the metallic region comprising the catalyst, first, and second metals. In embodiments, the method further comprises (E) forming a third layer of a primary metal on the metallic region; and (F) heating the glass article thereby forming the glass article comprising: (i) the oxide of the first metal covalently bonded the glass substrate; and (ii) a new metallic region bonded to the oxide comprising the catalyst, first, second, and primary metals.

Method of manufacturing a glass article to provide increased bonding of metal to a glass substrate via the generation of a metal oxide layer, and glass articles such as glass interposers including the metal oxide layer

A sub-assembly includes a glass substrate, a plurality of electronic devices, and a passivation layer. The glass substrate includes a first surface, a second surface opposite to the first surface, and a third surface extending between the first surface and the second surface. The glass substrate includes a plurality of laser damaged regions extending from the first surface to the second surface. The plurality of electronic devices are on the first surface of the glass substrate. The passivation layer is on the plurality of electronic devices and the third surface of the glass substrate. The passivation layer includes an opening to each laser damaged region of the plurality of laser damaged regions.

Through glass via fabrication using a protective material

A method of fabricating microstructures of polar elastomers includes coating a substrate with a dielectric material including a polar elastomer, coating the dielectric material with a photoresist, exposing the photoresist to ultraviolet (UV) light through a photomask to define a pattern on the photoresist, developing the photoresist to form the pattern on the photoresist, etching the dielectric material to transfer the pattern from the photoresist to the dielectric material, and removing the photoresist from the patterned dielectric material.

Polar elastomer microstructures and methods for fabricating same

Embodiments are related to substrates having one or more well structures each exhibiting substantially vertical sidewalls and substantially planar bottoms.

Fluidic assembly substrates and methods for making such

According to various embodiments described herein, an article comprises a glass or glass-ceramic substrate having a first major surface and a second major surface opposite the first major surface, and a via extending through the substrate from the first major surface to the second major surface over an axial length in an axial direction. The article further comprises a helium hermetic adhesion layer disposed on the interior surface; and a metal connector disposed within the via, wherein the metal connector is adhered to the helium hermetic adhesion layer. The metal connector coats the interior surface of the via along the axial length of the via to define a first cavity from the first major surface to a first cavity length, the metal connector comprising a coating thickness of less than 12 &#x3bc;m at the first major surface. Additionally, the metal connector coats the interior surface of the via along the axial length of the via to define a second cavity from the second major surface to a second cavity length, the metal connector comprising a coating thickness of less than 12 &#x3bc;m at the second major surface and fully fills the via between the first cavity and the second cavity.

An article includes a glass or glass-ceramic substrate having a first major surface and a second major surface opposite the first major surface, and at least one via extending through the substrate from the first major surface to the second major surface over an axial length in an axial dimension. The article also includes a metal connector disposed within the via that hermetically seals the via. The article has a helium hermeticity of less than or equal to 1.0&#xd7;10atm-cc/s after 1000 thermal shock cycles, each of the thermal shock cycle comprises cooling the article to a temperature of &#x2212;40&#xb0; C. and heating the article to a temperature of 125&#xb0; C., and the article has a helium hermeticity of less than or equal to 1.0&#xd7;10atm-cc/s after 100 hours of HAST at a temperature of 130&#xb0; C. and a relative humidity of 85%.

A method for producing a conductive through-via, including applying a seed layer on a surface of a first substrate, and forming a surface modification layer on at least one of the seed layer and a second substrate. Next, the second substrate is bonded to the first substrate with the surface modification layer to form an assembly. A conductive release layer is formed in the at least one through-via by placing a conductive release material into the at least one through-via. The conductive release layer is present on the seed layer and in the at least one through-via. A conductive metal material is applied to the at least one through-via, and the second substrate is removed from the assembly after applying the conductive metal material to the at least one through via.

Growing community of inventors

Corning, NY, United States of America

Rajesh Vaddi