Sigma-Aldrich Co. LLC

Seastar Chemicals Ulc

Other

Merck Patent Gmbh

Novellus Systems Incorporated

Rajesh Odedra

Ravi Kanjolia

Peter Nicholas Heys

Neil Boag

Graham Williams

Paul Williams

Fuquan Song

Mark Saly

Andrew Kingsley

Thomas Leese

Hywel Owen Davies

Cunhai Dong

Jeff Anthis

Megan Ravetz

Shaun Cembella

Adrien LaVoie

David W Weyburne

Andrew R Nelson

Daniel Moser

Wesley P Graff

Shaun Garratt

Hugh Cunning

Phillip Reeve Jacobs

Sarah Louise Hindley

Ravi Konjolia

Roy Trevor Blunt

Howard Williams

Diana Fabulyak

A class of organometallic compounds is provided. The compounds correspond in structure to Formula 1 (A)x-M-(OR3)4-x wherein: A is selected from the group consisting of &#x2014;NR1R2, &#x2014;N(R4)(CH2)nN(R5R6), &#x2014;N&#x2550;C(NR4R5)(NR6R7), OCOR1, halo and Y; R1 and R2 are independently selected from the group consisting of H and a cyclic or acyclic alkyl group having from 1 to 8 carbon atoms, with the proviso that at least one of R1 and R2 must be other than H; R4, R5, R6 and R7 are independently selected from the group consisting of H and an acyclic alkyl group having from 1 to 4 carbon atoms; Y is selected from the group consisting of a 3- to 13-membered heterocyclic radical containing at least one nitrogen atom; R3 is a cyclic or acyclic alkyl group having from 1 to 6 carbon atoms; M is selected from the group consisting of Si, Ge, Sn, Ti, Zr and Hf; x is an integer from 1 to 3; and n is an integer from 1 to 4. Compounds of the invention may be useful as precursors in chemical phase deposition processes such as atomic layer deposition (ALD), chemical vapour deposition (CVD), plasma assisted ALD and plasma assisted CVD. Methods of low temperature vapour phase deposition of metal oxide films, such as SiO2 films, are also provided.

Organometallic compound and method

Disclosed herein are methods of purifying compounds useful for the deposition of high purity tin oxide and high purity compounds purified by those methods. Such compounds are those of the Formula as follows R&#x2014;Sn-A, wherein: 

Organometallic compounds and purification of such organometallic compounds

A method for forming a metal-containing film includes: a) providing at least one substrate; b) delivering to said substrate at least one compound of Formula 1 in the gaseous phase, (RRR(Si))&#x2014;Co(CO)(Formula 1), wherein R, Rand Rare independently selected lower alkyl groups; and c) simultaneously with or subsequently to step b), delivering to said substrate a co-reagent in the gaseous phase, the co-reagent being lower alcohol. Further, a method of selectively depositing a metal-containing film includes: a) providing at least two substrates comprising different materials, one of said at least two substrates has an affinity for Si and another of said at least two substrates has an affinity for CO; b) delivering to said substrates at least one compound of the Formula 1 in the gaseous phase; and c) simultaneously with or subsequently to step b), delivering to said at least two substrates at least one co-reagent in the gaseous phase.

Organometallic compounds useful for chemical phase deposition

Molybdenum (IV) amide complexes are disclosed herein corresponding in structure to Formula (I): wherein: L is &#x2014;NRR; Rand Rare C-C-alkyl or hydrogen; R is C-C-alkyl; and n is zero, 1, 2 or 3. Further, methods of forming MoOfilms by atomic layer deposition (ALD) using Formula (I) complexes and Mo[N(Me)(Et)]are disclosed herein. 

Molybdenum (IV) amide precursors and use thereof in atomic layer deposition

Molybdenum complexes and use thereof in thin film deposition, such as CVD and ALD are provided herein. The molybdenum complexes correspond in structure to Formula (I) and Formula (II), wherein R, R, R, R, Rand Rare independently and at each occurrence alkyl; R, Rand Rare independently alkyl; Rand Rare independently and at each occurrence selected from the group consisting of alkyl, alkenyl, and alkynyl; x, z, a, c, d and f are independently zero, 1, or 2; y, b and e are independently zero or 1; and n and m are independently zero to 5. 

Molybdenum allyl complexes and use thereof in thin film deposition

A method for forming a cobalt-containing thin film by a vapor deposition process is provided. The method comprises using at least one precursor corresponding in structure to Formula (I); wherein Rand Rare independently C-C-alkyl; x is zero, 1 or 2; and y is zero or 1; wherein both x and y can not be zero simultaneously. 

High molecular weight alkyl-allyl cobalttricarbonyl complexes and use thereof for preparing dielectric thin films

Organometallic complexes and use thereof in thin film deposition, such as CVD and ALD are provided herein. The organometallic complexes are (alkyl-substituted &#x3b7;-allyl)(carbonyl)metal complexes.

Alkyl-substituted allyl carbonyl metal complexes and use thereof for preparing dielectric thin films

Methods of forming titanium-containing films by atomic layer deposition are provided. The methods comprise delivering at least one precursor to a substrate, wherein the at least one precursor corresponds in structure to Formula I: wherein:

Methods of atomic layer deposition using titanium-based precursors

A method of depositing a film on a substrate surface includes providing a substrate in a reaction chamber; selecting a silicon-containing reactant from a precursor group consisting of di-tert-butyl diazidosilane, bis(ethylmethylamido)silane, bis(diisopropylamino)silane, bis(tert-butylhydrazido)diethylsilane, tris(dimethylamido)silylazide, tris(dimethylamido)silylamide, ethylsilicon triazide, diisopropylaminosilane, and hexakis(dimethylamido)disilazane; introducing the silicon-containing reactant in vapor phase into the reaction chamber under conditions allowing the silicon-containing reactant to adsorb onto the substrate surface; introducing a second reactant in vapor phase into the reaction chamber while the silicon-containing reactant is adsorbed on the substrate surface, and wherein the second reactant is introduced without first sweeping the silicon-containing reactant out of the reaction chamber; and exposing the substrate surface to plasma to drive a reaction between the silicon-containing reactant and the second reactant on the substrate surface to form the film.

Method of plasma activated deposition of a conformal film on a substrate surface

Methods of forming thin metal-containing films by chemical phase deposition, particularly atomic layer deposition (ALD) and chemical vapor deposition (CVD), are provided. The methods comprise delivering at least one organometallic precursor to a substrate, wherein the at least one precursor corresponds in structure to Formula (II); wherein: M is Ru, Fe or Os; R is Q-C-alkyl; X is C-C-alkyl; and n is zero, 1, 2, 3, 4 or 5. Further provided are methods of making precursors disclosed herein.

Methods of forming thin metal-containing films by chemical phase deposition

An organometallic precursor is provided. The precursor corresponds in structure to Formula I:Cp(R)M(CO)(X)&#x2003;&#x2003;(Formula I)wherein: M is Ru, Fe or Os; R is C-C-alkyl; X is C-C-alkyl; and n is 1, 2, 3, 4 or 5. The precursors are useful in chemical phase deposition processes, such as atomic layer deposition (ALD) and chemical vapor deposition (CVD).

Organometallic precursors for use in chemical phase deposition processes

A bubbler () for delivering liquid or solid metalorganic compounds to a reactor site. The bubbler has an inner and outer chamber and has a member () positioned between its inlet () and outlet () that is provided with a plurality of apertures therein. The member () is preferably in the form of a perforated disc having a predefined density of apertures therein to provide optimum pick up and flow of carrier gas through the bubbler.

Bubbler for the transportation of substances by a carrier gas

Methods of forming titanium-containing films by atomic layer deposition are provided. The methods comprise delivering at least one precursor to a substrate, wherein the at least one precursor corresponds in structure to Formula I: 

Methods of forming a metal-containing film by atomic layer deposition is provided. The methods comprise delivering at least one precursor to a substrate, wherein the at least one precursor corresponds in structure to Formula II: wherein: M is Hf or Zr; R is C-C-alkyl; n is zero, 1, 2, 3, 4 or 5; L is C-C-alkoxy. Further methods are provided of forming a metal-containing film by liquid injection atomic layer deposition. The methods comprise delivering at least one precursor to a substrate, wherein the at least one precursor corresponds in structure to Formula III: wherein: M is Hf or Zr; R is C-C-alkyl; n is zero, 1, 2, 3, 4 or 5; L is amino, wherein the amino is optionally independently substituted 1 or 2 times with C-C-alkyl.

Methods of atomic layer deposition using hafnium and zirconium-based precursors

A process and apparatus to enable the continuous isolation of an organometallic compound, such as trimethylindium from a liquid feedstock. The liquid feedstock is delivered to a distillation column having two heating zones to effect dissociation of the feed stock thereby liberating the organometallic compound, which is collected as a vapor from the top of the column.

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Altrincham, United Kingdom

Rajesh Odedra