Hrl Laboratories, LLC

The Boeing Company

Hughes Electronics Corporation

Rajesh D Rajavel

Hasan Sharifi

Daniel Yap

David H Chow

Terence J De Lyon

Sarabjit Mehta

Terence J DeLyon

Sevag Terterian

Yakov Royter

Brett Z Nosho

Minh B Nguyen

Tahir Hussain

Andrew T Hunter

James Chingwei Li

Stanislav I Ionov

Marko Sokolich

Mary Y Chen

Mehran Mokhtari

Pierre-Yves Delaunay

Stephen Thomas, Iii

Steven S Bui

Owen K Wu

Adam Franklin Gross

Andrew Paul Nowak

James H Schaffner

Jacob Michael Hundley

Peter David Brewer

Ashley M Dustin

April Rose Rodriguez

Joseph S Colburn

Kenneth Robert Elliott

Ken Elliott

Mary C Montes

Irina Ionova, Legal Representative

Don F Weston

Diego Carrasco

Sophi Ionova, Legal Representative

An apparatus and method for a detector are disclosed. The apparatus disclosed contains a non-absorbing layer shaped as one or more pyramids, one or more collector regions, an absorber layer disposed between the one or more collector regions and the non-absorbing layer, a first electrical contact, and a second electrical contact, wherein the absorber layer is configured to absorb photons of incident light and generate minority electrical carriers and majority electrical carriers, wherein the one or more collector regions are electrically connected with the absorber layer and with the first electrical contact for extracting the minority electrical carriers, and the absorber layer is electrically connected with the one or more collector regions and with the second electrical contact to extract the majority electrical carriers.

Wideband detector structures

Infrared-transparent and damage-resistant polymer optics with LWIR and/or MWIR transparency are provided. Some variations provide an optic containing at least 50 wt % of an infrared-transparent polymer, wherein the infrared-transparent polymer has a carbon-free polymer backbone, wherein the optic is characterized by at least 80% average transmission of radiation over a wavenumber band with cumulative wavenumber width of at least 1000 cmcontained within wavelengths from 3.1 &#x3bc;m to 5 &#x3bc;m and/or from 8.1 &#x3bc;m to 12 &#x3bc;m, and wherein the average transmission is defined as the percentage ratio of radiation intensity through an optic thickness of 25 microns divided by incident radiation intensity. Many polymer compositions and pendant groups are disclosed for use in the polymer optics.

Infrared-transparent polymer optics and methods of making and using the same

An infrared detector. The detector includes: a superlattice structure including: at least three first layers; and at least three second layers, alternating with the first layers. Each of the first layers includes, as a major component, InAsP, wherein x is between 0.0% and 99.0%, and each of the second layers includes, as a major component, InAsSb, wherein y is between 0% and 60%.

High quantum efficiency superlattice infrared detector

A phototransistor includes an emitter, a collector, and a base between the emitter and the collector. The base has a thickness greater than 500 nanometers and the base absorbs photons passing through the collector to the base.

Infrared photodetector with optical amplification and low dark current

An infrared photo-detector array and a method for manufacturing it are disclosed. The infrared photo-detector array contains a plurality of pyramid-shaped structures, a first light-absorbing material supporting the plurality of the pyramid-shaped structure, a carrier-selective electronic barrier supporting the first light-absorbing material, a second light-absorbing material supporting the carrier-selective electronic barrier, and a metal reflector supporting the second light-absorbing material, wherein the plurality of the pyramid shaped structures are disposed on the side of the photo-detector array facing the incident light to be detected and the metal reflector is disposed on the opposite side of the photo-detector array. The method disclosed teaches how to manufacture the infrared photo-detector array.

Reduced volume dual-band MWIR detector

An infrared detector and a method for manufacturing it are disclosed. The infrared photo-detector contains a photo absorber layer responsive to infrared light, a first barrier layer disposed on the absorber layer, wherein the first barrier layer substantially comprises AlSb, a second barrier layer disposed on the first barrier layer, wherein the second barrier layer substantially comprises AlGaSb and a contact layer disposed on the second barrier layer.

Infrared photo-detector with low turn-on voltage

An infrared photo-detector and a method for manufacturing it are disclosed. The infrared photo-detector contains a collector region, a first absorber layer absorbing a first wavelength band of incident light, wherein the first absorber layer is disposed between the collector region and the incident light, a second absorber layer absorbing a second wavelength band of light, wherein the first absorber layer is disposed between the second absorber layer and the incident light, at least one first electrical contact coupled with the first absorber layer, at least one second electrical contact coupled with the second absorber layer and at least one third electrical contact coupled with the collector, wherein the at least one third electrical contact provides a current associated with absorbed light of the first wavelength band and absorbed light of the second wavelength band. The method disclosed teaches how to manufacture the infrared photo-detector.

Triple output, dual-band detector

Methods of fabrication and monolithic integration of a polycrystalline infrared detector structure deposit Group III-V compound semiconductor materials at a low deposition temperature within a range of about 300&#xb0; C. to about 400&#xb0; C. directly on an amorphous template. The methods provide wafer-level fabrication of polycrystalline infrared detectors and monolithic integration with a readout integrated circuit wafer for focal plane arrays.

Polycrystalline semiconductor infrared detector

Fabrication of polycrystalline semiconductor infrared detector

A detector. The detector includes a first collector, a first interface layer on the first collector, a first absorber on the first interface layer, a second interface layer on the first absorber, and a second collector on the second interface layer. The first absorber is configured to absorb photons to generate electron-hole pairs. The first interface layer may include a barrier configured to impede the flow of majority carriers from the first absorber to the first collector. The second barrier may include a barrier configured to impede the flow of majority carriers from the first absorber, or from a second absorber, to the second collector.

High performance or wavelength configurable detector

A position sensitive detector includes a substrate, an absorber layer on the substrate, a barrier layer on the absorber layer, a contact layer on the barrier layer, and a first contact and a second contact on the contact layer. The barrier layer prevents a flow of majority carriers from the absorber layer to the contact layer. The position sensitive detector is sensitive to a lateral position between the first contact and the second contact of incident light on the contact layer.

Low cost, high performance barrier-based position sensitive detector arrays

The invention describes a device which enables MWIR photodetectors to operate at zero bias and deliver low dark current performance. The performance is achieved by incorporating a p-n junction in the barrier. The device consists of a p-type contact layer, a p-n junction in the compound barrier (CB) with graded composition and/or doping profiles, and an n-type absorber (p-CB-n) device.

MWIR photodetector with compound barrier with P-N junction

A wavelength-selective optical diffuser comprising a substrate of a first material having opposite first and second surfaces, wherein said first material is transparent to a first wavelength &#x3bb;and a second wavelength &#x3bb;, with &#x3bb;&#x3e;4&#x3bb;; at least a first surface of said substrate having a surface relief such that a beam of light having the first wavelength &#x3bb;is diffused, with a rms phase delay S&#x3e;&#x3c0;/4, when traversing said substrate; and a beam of light having the second wavelength &#x3bb;is minimally diffused, with a rms phase delay S&#x3c;&#x3c0;/4, when traversing said substrate.

Wavelength selective optical diffuser

An infrared photo-detector with multiple discrete regions of a first absorber material. These regions may have geometric shapes with sloped sidewalls. The detector also may include a second absorber region comprising a second absorber material that absorbs light of a shorter wavelength than the light absorbed by the multiple discrete absorber regions of the first absorber material. The geometric shapes may extend only through the first absorber material. Alternatively, the geometric shapes may extend partially into the second absorber region. The detector has a metal reflector coupled to the multiple discrete absorber regions. The detector also has a substrate containing the discrete absorber regions and the second absorber region. The substrate can further include geometric shaped features etched into the substrate, with those features formed on the side of the substrate opposite the side containing the discrete absorber regions and the second absorber region.

Method of making an optical detector

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Oak Park, CA, United States of America

Rajesh D Rajavel