Samsung Electronics Co., Ltd.

Rajeev Ranjan

Kwanyoung Chun

Chul Hong Park

Jae Seok Yang

Jaeseok Yang

Chulhong Park

Deepak Sharma

Kwan Young Chun

Sharma Deepak

Subhash Kuchanuri

Kuchanuri Subhash

Integrated circuit devices are provided. The IC devices may include an active region extending in a first direction, first and second gate electrodes extending in a second direction, a first impurity region in the active region adjacent a first side of the first gate electrode, a second impurity region in the active region between a second side of the first gate electrode and a first side of the second gate electrode, a third impurity region in the active region adjacent a second side of the second gate electrode, a cross gate contact electrically connecting the first and second impurity regions, a first contact electrically connected to the third impurity region, a first wire electrically connected to the cross gate contact, and a second wire electrically connected to the first contact. The first and second wires may extend only in the first direction and may be on the same line.

Integrated circuit (IC) devices including cross gate contacts

A semiconductor device includes a first active pattern extending in a first direction on a first region and a second region of a substrate, a first dummy gate electrode extending in a second direction crossing the first active pattern between the first region and the second region, a contact structure contacting the first dummy gate electrode and extending in the first direction, and a power line disposed on the contact structure and electrically connected to the contact structure. The power line extends in the first direction. The contact structure overlaps with the power line when viewed in a plan view.

Semiconductor device and method of manufacturing semiconductor device

Growing community of inventors

Hwaseong-si, South Korea

Rajeev Ranjan