Hewlett Packard Enterprise Development LP

Lumileds LLC

Rajat Sharma

Erik William Young

Ammar Ekbote

Anirudha Kumar

Kumar Thangavelu

Dennis Scott

Yu-Chen Shen

Andrei Papou

Wen Yu

Ashish Tandon

Praveen Killamsetti

Luke Gordon

Sandeep Karmarkar

Joseph Flemish

Umesh Maheshwari

Oleg Borisovich Shchekin

Toni Lopez

Gurunatha Karaje

Srikant Varadan

Senthil Kumar Ramamoorthy

Hy Dinh Vu

Franklin George

Ashutosh Datar

A device may include a metal contact between a first isolation region and a second isolation region on a first surface of an epitaxial layer. The device may include a first sidewall and a second sidewall on a second surface of the epitaxial layer distal to the first isolation region and the second isolation region. The device may include a wavelength converting layer on the epitaxial layer between the first sidewall and the second sidewall.

Monolithic segmented LED array architecture with islanded epitaxial growth

Described are light emitting diode (LED) devices comprising a plurality of mesas defining pixels, each of the plurality of mesas comprising semiconductor layers, an N-contact material in a space between each of the plurality of mesas, a dielectric material which insulates sidewalls of the P-type layer and the active region from the metal. Each of the mesas is spaced so that there is a pixel pitch in a range of from 10 μm to 100 μm and dark space gap between adjacent edges of p-contact layer. The dark space gap may be less than 20% of the pixel pitch. The dark space gap may be in a range of from 4 μm to 10 μm.

Light emitting diode devices

In some examples, a system arranges data in a plurality of nodes in a tree structure, where a given node of the plurality of nodes is associated with a probabilistic data structure that provides a probabilistic indication of whether data is present in the given node. The system determines, for reads of the given node, a false positive measure of false positives indicated by the probabilistic data structure, and prioritizes a compaction of the given node based on the determined false positive measure.

Tree structure node compaction prioritization

Described are light emitting diode (LED) devices comprising a plurality of mesas defining pixels, each of the mesas comprising semiconductor layers, an N-contact material in a space between each of the plurality of mesas, a dielectric material which insulates sidewalls of the P-type layer and the active region from the metal. A multilayer composite film is on the P-type layer, the multilayer composite film comprising: a current spreading layer on the P-type layer, the current spreading layer having a first portion and a second portion; a dielectric layer on the second portion of the current spreading layer; a via opening defined by sidewalls in the dielectric layer and the first portion of the current spreading layer; and a P-contact layer in the via opening on the first portion of the current spreading layer, the sidewalls in the dielectric layer, and on at least a portion of the dielectric layer.

Light emitting diode devices with multilayer composite film including current spreading layer

Described are light emitting diode (LED) devices comprising a plurality of mesas defining pixels, each of the mesas comprising semiconductor layers, an N-contact material in a space between each of the plurality of mesas, a dielectric material which insulates sidewalls of the P-type layer and the active region from the metal. A current spreading layer is on the P-type layer, the current spreading layer having a first portion and a second portion; a hard mask layer above the second portion of the current spreading layer, the hard mask layer comprising sidewalls defining a hard mask opening; a liner layer conformally-deposited in the hard mask opening above the first portion of the current spreading layer and on the sidewalls of the hard mask layer; a P-metal material plug on the liner layer; a passivation layer on the hard mask layer; and an under bump metallization layer on the passivation layer.

Light emitting diode devices with current spreading layer

A computer implemented method may include: storing key-value pairs in an index in persistent storage, where indirect nodes of the index include pointers, where each pointer identifies an index portion and includes a generation identifier for the identified index portion, where the index comprises a plurality of snapshots associated with a plurality of generations; receiving a request to read data of a particular snapshot of the index, wherein the particular snapshot is associated with a particular generation of the plurality of generations; in response to the request, performing a traversal starting from a particular root node associated with the particular generation; and providing the requested data based on the traversal.

Generating snapshots of a key-value index

A computer implemented method may include: receiving write requests to add key-value pairs to an index; storing the key-value pairs in a buffer of an indirect node of the index; determining whether the buffer of the indirect node exceeds a threshold level; and in response to a determination that the buffer of the indirect node exceeds the threshold level, transferring the key-value pairs stored in the buffer of the indirect node to buffers of a plurality of child nodes, where each buffer of the plurality of child nodes is smaller than the buffer of the indirect node.

Key-value index with node buffers

A light-emitting device is disclosed which includes a segmented active layer disposed between a segmented conductivity layer and a continuous conductivity layer, the active layer, the segmented conductivity layer, and the continuous conductivity layer being arranged to define a plurality of pixels, each pixel including a different segment of the segmented conductivity layer and the segmented active layer. A continuous wavelength converting layer disposed on the continuous conductivity layer is provided. A plurality of first contacts, each first contact being electrically connected to a different segment of the segmented conductivity layer is provided. One or more second contacts that are electrically connected to the continuous conductivity layer are also provided, the number of second contacts being less than the number of first contacts.

Monolithic, segmented light emitting diode array

Methods for estimating cost savings in a storage system using an external host system. One method includes accessing over a communication network data from a unit of storage of a data storage system, wherein each of the blocks of data is uncompressed. A plurality of blocks is parsed from the data. A plurality of fingerprints is generated from the blocks using a hash algorithm. A deduplication ratio is estimated for the plurality of blocks stored in the unit of storage using a hyperloglog algorithm and a first plurality of buckets compartmentalizing the plurality of blocks, wherein the first plurality of buckets is defined by precision bits of the plurality of fingerprints. An effective compression ratio is estimated for the plurality of blocks stored in the unit of storage using the hyperloglog algorithm and a second plurality of buckets compartmentalizing the plurality of blocks, wherein the second plurality of buckets is defined by ranges of compression ratios.

Methods for estimating cost savings using deduplication and compression in a storage system

When data blocks of a data seglet are compressed using a shared dictionary and when the requested data block (or blocks) do not include the last data block of the data seglet, an optimization in the read path may involve decompressing a certain portion of the data seglet from a starting position of the data seglet to a decompression endpoint of the data seglet, but not including the portion of the data seglet following the decompression endpoint. Such technique may involve the storing of a mapping that maps, for each data block within the data seglet, an identifier of the data block to a decompression endpoint that indicates a portion of the data seglet that includes the data block.

Methods and systems for efficiently reading a data block from a data seglet with compressed data blocks

Methods, systems, and computer programs are presented for dynamic adaptive compression in a storage device. One method includes operations for setting a percentage factor for utilizing a first and a second compression algorithms, and for receiving incoming blocks in the memory of the storage device. The incoming blocks are compressed before being sent to permanent storage, where a portion of the incoming blocks are compressed with the first compression algorithm based on the percentage factor, and the remainder is compressed with the second compression algorithm. Further, the method includes determining that a processor utilization rate, of a processor in the storage device, is below a first predetermined threshold, and decreasing, in response to the determining, the percentage factor to decrease the portion of the incoming blocks that are compressed with the first compression algorithm, while the remainder of the incoming blocks is compressed with the second compression algorithm.

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San Jose, CA, United States of America

Rajat Sharma