Soraa, Inc.

University of California

Japan Science and Technology Agency

Soraa Laser Diode, Inc.

Korrus, Inc.

Kaai, Inc.

Rajat Sharma

Daniel F Feezell

Shuji Nakamura

Andrew Felker

Eric M Hall

Steven P DenBaars

James Stephen Speck

Mark Philip D'Evelyn

James W Raring

Umesh Kumar Mishra

Arpan Chakraborty

Benjamin A Haskell

Christiane Poblenz

Troy J Baker

Robert M Farrell

P Morgan Pattison

Mathew C Schmidt

Thomas M Katona

John F Kaeding

William D Houck, Ii

Nicholas J Pfister

Aurelien J F David

Rafael Ignacio Aldaz

Yu-Chia Chang

Christiane Elsass

Hong Zhong

Paul Morgan Pattison

Michael Joseph Cich

Evelyn Lynn Hu

Aurelien David

Aurelien Jf David

Elaine D Haberer

A gallium and nitrogen containing optical device has a base region and no more than three major planar side regions configured in a triangular arrangement provided from the base region.

Gallium and nitrogen containing triangular or diamond-shaped configuration for optical devices

A method for growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices, comprising identifying desired material properties for a particular device application, selecting a semipolar growth orientation based on the desired material properties, selecting a suitable substrate for growth of the selected semipolar growth orientation, growing a planar semipolar (Ga,Al,In,B)N template or nucleation layer on the substrate, and growing the semipolar (Ga,Al,In,B)N thin films, heterostructures or devices on the planar semipolar (Ga,Al,In,B)N template or nucleation layer. The method results in a large area of the semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices being parallel to the substrate surface.

Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices

A light emitting device includes a substrate having a surface region and a light emitting diode overlying the surface region. The light emitting diode is fabricated on a semipolar or nonpolar GaN containing substrate and emits electromagnetic radiation of a first wavelength. The diode includes a quantum well region characterized by an electron wave function and a hole wave function. The electron wave function and the hole wave function are substantially overlapped within a predetermined spatial region of the quantum well region. The device has a transparent phosphor overlying the light emitting diode. The phosphor is excited by the substantially polarized emission to emit electromagnetic radiation of a second wavelength.

Polarized white light devices using non-polar or semipolar gallium containing materials and transparent phosphors

A method of fabricating LEDs from a wafer comprising a substrate and epitaxial layers and having a substrate side and a epitaxial side, said method comprising: (a) applying a laser beam across at least one of said substrate side or said epitaxial side of said wafer to define at least one laser-scribed recess having a laser-machined surface; and (b) singulating said wafer along said laser-scribed recess to form singulated LEDs, said singulated LEDs having a top surface, a bottom surface, and a plurality of sidewalls, at least one of said sidewalls comprising at least a first portion comprising at least a portion of said laser-machined surface.

Methods and devices for light extraction from a group III-nitride volumetric LED using surface and sidewall roughening

Array of triangular semiconductor dies

An optical device includes a gallium nitride substrate member having an m-plane nonpolar crystalline surface region characterized by an orientation of about &#x2212;1 degree towards (000-1) and less than about +/&#x2212;0.3 degrees towards (11-20). The device also has a laser stripe region formed overlying a portion of the m-plane nonpolar crystalline orientation surface region. In a preferred embodiment, the laser stripe region is characterized by a cavity orientation that is substantially parallel to the c-direction, the laser stripe region having a first end and a second end. The device includes a first cleaved c-face facet, which is coated, provided on the first end of the laser stripe region. The device also has a second cleaved c-face facet, which is exposed, provided on the second end of the laser stripe region.

Optical device structure using GaN substrates for laser applications

An optical device includes a gallium nitride substrate member having an m-plane nonpolar crystalline surface region characterized by an orientation of about &#x2212;2 degrees to about 2 degrees towards (000-1) and less than about 0.5 degrees towards (11-20). The device also has a laser stripe region formed overlying a portion of the m-plane nonpolar crystalline orientation surface region. A first cleaved c-face facet is provided on one end of the laser stripe region, and a second cleaved c-face facet is provided on the other end of the laser stripe region.

Triangular semiconductor die

Embodiments of the present disclosures are directed to improved approaches for achieving high-performance light extraction from a Group III-nitride volumetric LED chips. More particularly, disclosed herein are techniques for achieving high-performance light extraction from a Group III-nitride volumetric LED chip using surface and sidewall roughening.

Methods and devices for light extraction from a Group III-nitride volumetric LED using surface and sidewall roughening

Array of triangular semiconductor dice

Diamond-shaped semiconductor die

Growing community of inventors

Goleta, CA, United States of America

Rajat Sharma