Nxp B.v.

Rajat Kohli

Jwalant Kumar Mishra

Patrick Van De Steeg

Pankaj Agarwal

Glenn Charles Abeln

Jainendra Singh

Dwarka Prasad

Prokash Ghosh

Jyotirmoy Ghosh

A memory power control unit, MPCU, is provided for preventing unauthorised access to data stored in a volatile memory, the MPCU comprising a power controller comprising an input configured to receive a signal from a tamper detection circuit, a first supply input configured 5 to receive a first supply voltage, a first reference input configured to receive a first reference voltage, a supply output configured to output a supply voltage to the volatile memory, a reference output configured to output a reference voltage to the volatile memory, wherein, in response to receipt of a signal at the input indicative of an attempt to tamper with the volatile memory, the power controller is configured to output a reduced supply voltage via the supply 10 output for a first predetermined time period, wherein the reduced supply voltage is less than the first supply voltage.

Memory power control unit

A read-only memory (ROM) device includes memory cells, bit-line pairs, a virtual ground line, and a programmable metal track. The memory cells are arranged in an array of rows and columns. Each memory cell stores two bits of data. The virtual ground line is disposed vertically and shared by two adjacent columns. The programmable metal track connects a memory cell to the virtual ground line based on a value of the two bits of data stored in the memory cell.

Dual-bit ROM cell with virtual ground line and programmable metal track

Disclosed is a ROM memory including a first bitcell including a transistor to store two bits and first and second bit lines to read data stored in the bitcell, a second bitcell including a second transistor connected to the first transistor and sharing the first and second bit lines, and a virtual ground line adjacent the bit lines configured to ground the bitcells.

High density ROM cell with dual bit storage for high speed and low voltage

Disclosed is a ROM memory device including a plurality of rows and columns of memory cells, each memory cell including a bit line pair and a transistor to store two bits of data therein, and a virtual ground line disposed between adjacent pairs of bit line pairs, wherein the bit line pair and virtual ground line are used to read data stored in the memory cells.

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Bengaluru, India

Rajat Kohli