Chartered Semiconductor Manufacturing Ltd (corporation)

Rajan Rajgopal

Yeow Meng Teo

Sik On Kong

George Wong

Chivukula Subrahmanyam

Xavier Teo Leng Seah

Dong Xiang Qi

Ronald Dickinson

Photolithographic methods for making liquid-crystal-on-silicon displays with alignment posts and optical interference layers

Methods of protecting, and increasing the thickness of, the oxidized silicon nitride (ON), component of an oxidized silicon nitride on silicon oxide (ONO), layer of a non-volatile memory device, during the hydrofluoric (HF), acid type procedures used for peripheral devices simultaneously fabricated with the non-volatile memory device, has been developed. A first method features a silicon nitride layer located only overlying the ONO layer of the non-volatile memory device, formed prior to HF type pre-clean procedures performed prior to gate oxidation procedures used for peripheral devices. After the gate oxidation procedures the silicon nitride capping layer is selectively removed. A second method features a polysilicon capping layer again located only overlying the ONO layer of the non-volatile memory device, again formed prior to HF type pre-clean procedures. For this iteration the protective polysilicon capping layer is oxidized during subsequent gate oxidation procedures and adds onto the ONO layer, subsequently overlaid by a control gate structure of the non-volatile memory device.

Method of preserving the top oxide of an ONO dielectric layer via use of a capping material

A method is provided for manufacturing an integrated circuit including a substrate with a gate layer and a gate dielectric provided on the substrate. The gate layer is formed into a gate using a process that imposes a charge in the gate dielectric. The substrate, gate, and gate dielectric are irradiated to discharge the charge across the gate dielectric.

Method using ultraviolet radiation for integrated circuit manufacturing

Growing community of inventors

Singapore, Singapore

Rajan Rajgopal