Evonik Degussa Gmbh

Rainer Nicolai

Hartwig Rauleder

Juergen Erwin Lang

Ekkehard Mueh

Reinhold Schork

Harald Klein

Jürgen Erwin Lang

Ekkehard Müh

Hanns-Peter Popp

Jürgen Lang

A reactor and a plant containing the reactor for conducting a continuous, industrial process for preparing high-purity silicon tetrachloride or high-purity germanium tetrachloride is provided. The plant contains a plasma reactor having a dielectric, a high voltage electrode and an earthed, metallic heat exchanger, in which the longitudinal axes of the dielectric, of the high-voltage electrode and of the earthed, metallic heat exchanger are oriented parallel to one another and at the same time parallel to the force vector of gravity.

Reactor and plant for the continuous preparation of high-purity silicon tetrachloride or high-purity germanium tetrachloride

The invention relates to an empty container () for receiving air- and/or moisture-sensitive compounds, comprising a connecting unit () and an inner volume of at least 300 liters and adapters for connecting the empty container, and to the use thereof.

Large container for handling and transporting high-purity and ultra high purity chemicals

A reactor, a plant, and a continuous, industrial process carried out therein for preparing high-purity silicon tetrachloride or high-purity germanium tetrachloride by treating the silicon tetrachloride or germanium tetrachloride to be purified, which is contaminated by at least one hydrogen-containing compound, by a cold plasma and isolating purified high-purity silicon tetrachloride or germanium tetrachloride from the resulting treated phase by fractional distillation. The treatment is carried out in a plasma reactor in which longitudinal axes of a dielectric, of a high-voltage electrode, and of a grounded, metallic heat exchanger are oriented parallel to one another and at the same time parallel to the force vector of gravity.

Reactor, plant and industrial process for the continuous preparation of high-purity silicon tetrachloride or high-purity germanium tetrachloride

The invention relates to a process for the purification's of silicon tetrachloride or germanium tetrachloride contaminated with at least one hydrogen-containing compound, in which the silicon tetrachloride or germanium tetrachloride to be purified is treated in a targeted manner by means of a cold plasma and purified silicon tetrachloride or germanium tetrachloride is isolated from the phase which has been treated in this way. The present invention further relates to an apparatus for carrying out the process of the invention, which comprises a stock and vaporization unit for silicon or germanium tetrachloride (or) which is connected via a connecting line with the inlet of the reactor (or) with control unit (or) for producing the dielectrically hindered discharges whose outlet leads via a pipe either directly or indirectly via at least one further reactor () to a condensation unit (or) with downstream collection vessel (or) which is connected via an offtake line (or) to a distillation unit (or) and, if appropriate, is equipped with a feed line () to the unit ().

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Basel, Switzerland

Rainer Nicolai