Ams Ag

Austriamicrosystems Ag

International Business Machines Corporation

Ams Sensors UK Limited

Rainer Minixhofer

Martin Schrems

Georg Roehrer

Jordi Teva

Jochen Kraft

Martin Knaipp

Hubert Enichlmair

Harald Etschmaier

Sara Carniello

Verena Vescoli

Steven H Voldman

Florin Udrea

James Albert Slinkman

Michael Joseph Zierak

Natalie Barbara Feilchenfeld

Richard A Phelps

Max Gerald Levy

BethAnn Rainey

Syed Zeeshan Ali

Georg Röhrer

Jong Mun Park

Mario Manninger

Bernhard Stering

Frederic Roger

Günther Koppitsch

Richard Henry Hopper

Stefan Jessenig

Ewald Wachmann

Ingrid Jonak-Auer

Guenther Koppitsch

Volker Peters

Ewald Stueckler

Herbert Truppe

Ewald Stückler

Jong-Mun Park

Othmar Leitner

Karl Ilzer

Bernard Loeffler

An optical sensor arrangement for time-of-flight comprises a first and a second cavity separated by an optical barrier and covered by a cover arrangement. An optical emitter is arranged in the first cavity, a measurement and a reference photodetector are arranged in the second cavity. The cover arrangement comprises a plate and layers of material arranged on an inner main surface thereof. The layers comprise an opaque coating with a first and second aperture above the first cavity, and with a third and fourth aperture above the second cavity. The measurement photodetector is configured to detect light entering the second cavity through the fourth aperture. The second and the third aperture establish a reference path for light from the emitter to the reference photodetector.

Optical sensor arrangement and method for manufacturing an optical sensor arrangement

We disclose an Infrared (IR) device comprising a first substrate comprising a first cavity; a dielectric layer disposed on the first substrate; a second substrate disposed on the dielectric layer and on the opposite side of the first substrate, the second substrate having a second cavity. The device further comprises an optically transmissive layer attached to one of the first and second substrates; a further layer provided to another of the first and second substrates so that the IR device is substantially closed. Holes are provided through the dielectric layer so that a pressure in the first cavity is substantially the same level as a pressure in the second cavity.

Infra-red device

The lateral single-photon avalanche diode comprises a semiconductor body comprising a semiconductor material of a first type of electric conductivity, a trench in the semiconductor body, and anode and cathode terminals. A junction region of the first type of electric conductivity is located near the sidewall of the trench, and the electric conductivity is higher in the junction region than at a farther distance from the sidewall. A semiconductor layer of an opposite second type of electric conductivity is arranged at the sidewall of the trench adjacent to the junction region. The anode and cathode terminals are electrically connected with the semiconductor layer and with the junction region, respectively. The junction region may be formed by a sidewall implantation.

Lateral single-photon avalanche diode and method of producing a lateral single-photon avalanche diode

The semiconductor device comprises a semiconductor substrate (), a sensor or sensor array () arranged at a main surface () of the substrate, an integrated circuit () arranged at or above the main surface, and a focusing element () comprising recesses () formed within a further main surface () of the substrate opposite the main surface. The focusing element may be arranged opposite the sensor or sensor array (), which may be a photosensor or photodetector or an array of photosensors or photodetectors, for instance. The focusing element () is formed by etching the recesses () into the semiconductor material.

Semiconductor device with surface integrated focusing element and method of producing a semiconductor device with focusing element

The semiconductor device comprises a semiconductor substrate (), a photosensor () integrated in the substrate () at a main surface (), an emitter () of radiation mounted above the main surface (), and a cover (), which is at least partially transmissive for the radiation, arranged above the main surface (). The cover () comprises a cavity (), and the emitter () is arranged in the cavity (). A radiation barrier () can be provided on a lateral surface of the cavity () to inhibit cross-talk between the emitter () and the photosensor ().

Semiconductor device comprising an emitter of radiation and a photosensor and appertaining production method

The method comprises the steps of providing a semiconductor device comprising a semiconductor layer () with at least one radiation sensor () and a dielectric layer (), arranging a web () comprising a plurality of recesses () on the dielectric layer, and introducing ink of different colors (A, B, C) in the recesses by inkjets (I).

Method of producing a radiation sensor semiconductor device comprising a multiple color filter

The integrated imaging device comprises a substrate () with an integrated circuit (), a cover (), a cavity () enclosed between the substrate () and the cover (), and a sensor () or an array of sensors () arranged in the cavity (). A surface () of the substrate () or the cover () opposite the cavity () has a structure () directing incident radiation. The surface structure () may be a plate zone or a Fresnel lens focusing infrared radiation and may be etched into the surface of the substrate or cover, respectively.

Integrated imaging device for infrared radiation and method of production

A cutout (), which penetrates the semiconductor body, is present in the semiconductor body (). A conductor layer (), which is electrically conductively connected to a metal plane () on or over the semiconductor body, screens the semiconductor body electrically from the cutout. The conductor layer can be metal, optionally with a barrier layer (), or a doped region of the semiconductor body.

Method for producing a semiconductor device comprising a conductor layer in the semiconductor body and semiconductor body

The photodiode has a p-type doped region () and an n-type doped region () in a semiconductor body (), and a pn junction () between the p-type doped region and the n-type doped region. The semiconductor body has a cavity () such that the pn junction () has a distance (d) of at most 30 &#x3bc;m from the bottom of the cavity ().

Photodiode and production method

A semiconductor body () comprises a field-effect transistor (). The field-effect transistor () comprises a drain region () of a first conduction type, a source region () of the first conduction type, a drift region () and a channel region () of a second conduction type which is opposite to the first conduction type. The drift region () comprises at least two stripes () of the first conduction type which extend from the drain region () in a direction towards the source region (). The channel region () is arranged between the drift region () and the source region ().

Field-effect transistor and method for producing a field-effect transistor

A chip design () comprising an external supply connection (VBAT), an internal supply connection (VDD), an integrated circuit () that is coupled to the internal supply connection (VDD) for voltage supply, and a fuse () that electrically connects the internal supply connection (VBAT) and is arranged within the chip design ().

Chip design having integrated fuse and method for the production thereof

Through a main surface () of a semiconductor substrate () of a first type of conductivity, a doped well of a second type of conductivity is implanted to form a sensor region () extending perpendicularly to the main surface. The sensor region can be confined laterally by trenches () comprising an electrically insulating trench filling (). The bottom of the sensor region is insulated by a pn-junction (). Contacts () are applied to the main surface and provided for the application of an operation voltage and the measurement of a Hall voltage.

Vertical Hall sensor and method of producing a vertical Hall sensor

A method of forming an isolation region is provided that in one embodiment substantially reduces divot formation. In one embodiment, the method includes providing a semiconductor substrate, forming a first pad dielectric layer on an upper surface of the semiconductor substrate and forming a trench through the first pad dielectric layer into the semiconductor substrate. In a following process sequence, the first pad dielectric layer is laterally etched to expose an upper surface of the semiconductor substrate that is adjacent the trench, and the trench is filled with a trench dielectric material, wherein the trench dielectric material extends atop the upper surface of the semiconductor substrate adjacent the trench and abuts the pad dielectric layer.

Integration of multiple gate oxides with shallow trench isolation methods to minimize divot formation

At least one terminal contact surface () is formed on a topmost metal plane (). Under it, in a secondmost metal plane (), is a reinforcement region (), in which the secondmost metal plane () is structured within its two-dimensional extent such that a part of the area of the vertical (with respect to the metal plane) projection of the terminal contact surface () onto the secondmost metal plane () that is occupied by the metal of the secondmost metal plane () amounts to at least one third of the area.

Semiconductor component with terminal contact surface

In order to produce doping regions (DG) in a substrate (S) having different dopings with the aid of a single mask (DM) different mask regions are provided which have elongated mask openings (MO) having different orientations relative to the spatial direction of an oblique implantation. The substrate is rotated between the first and second oblique implantations, wherein during the first oblique implantation maximum and minimum shadings in the different mask regions are opposite one another and the conditions are precisely reversed during the second oblique implantation after the rotation of the substrate.

Growing community of inventors

Unterpremstaetten, Austria

Rainer Minixhofer