Forschungszentrum Juelich Gmbh

U.S. Philips Corporation

Robert Boschgmbh

Infineon Technologies Ag

Forschungszentrum Julich Gmbh

Rheinisch-westfaelische Technische Hochschule

Rheinisch-westfaelische Technisque Hochschule (rwth) Aachen

Rheinisch-westfaelische Technische Hochschule Aachen (rwth)

Rheinish-westfaelische Technische Hochschule Aachen (rwth)

Rwth Aachen

Rheinisch-westfalische Technische Hochschule Aachen

Rainer M Waser

Ilia Valov

Eike Linn

Roland Daniel Rosezin

Lutz Nielen

Stefan Tappertzhofen

Mareike K Klee

Bernd Schumann

Rainer Bruchhaus

Detlev F Hennings

Thomas Wahl

Thomas Peter Haneder

Robertus A Wolters

Oswald Spindler

Hans-Wolfgang Brand

Albert A Comberg

Thomas Schulte

Harald Bachhofer

Reiner Schuetz

Theodor Schneller

Johan W De Vries

Florian Lentz

Peter Scharff

Daniel Bick

Jan Van Den Hurk

Elke Linn

Jürgen Dornseiffer

Carsten Kuegeler

Carsten KÜGELER

Christian Pithan

Hayoto Katsu

Disclosed is a biphasic electrically conductive perovskite-based mixed oxide of the structure ABOwith A=Ba, and B=Co, comprising additionally 5-45 at %, preferably 15 to 30 at %, particularly preferably 25 at % CoO(at % Co based on the total number of Co atoms in the perovskite ABOand 0.5 to 0.3 at %, preferably 1 to 2.5 at %, particularly preferably 2 at % (wherein the at % are referred to the total number of B cations in the perovskite ABO) Ti as dopant. Preferably, the mixed oxide has the stoichiometric formula BaCoTiO:CoOwith x=0.005 to 0.03, preferably x=0.01 to 0.025, particularly preferably x=0.02, wherein &#x3b4; defines the vacancies in the perovskite structure and is in the range of about 0.1 to 0.8, preferably 0.3 to 0.7, particularly preferably about 0.5 to 0.6. Further disclosed are a catalyst and an anode comprising the mixed oxide, the use of the catalyst in alkaline water electrolysis or in metal-air batteries, the use of the mixed oxide for the preparation of an anode for alkaline water electrolysis or metal-air batteries. Further, manufacturing processes for a precursor solution for the mixed oxide and for the inventive anode are disclosed, as well as an amorphous mixed oxide having a Co:Ba ratio of about 2:1 and a TTB (Tetragonal Tungsten-Bronze)-like near structure obtainable by using the mixed oxide according to the invention as catalyst in the oxygen evolution reaction of alkaline water electrolysis, whereby said amorphous product is formed by leaching out Ba.

Chemically resistant, oxidic electrocatalyst for oxygen evolution during alkaline water electrolysis

A method for reading out a resistive memory cell comprising two electrodes that are spaced from each other by an ion-conducting resistive material was developed, the memory cells being transferrable from a stable state having a higher resistance value (high resistive state, HRS) to a stable state having a lower resistance value (low resistive state, LRS) when a write voltage is applied. A read voltage is applied as a read pulse for reading out, wherein the number of ions driven through the ion-conducting resistive material during the pulse is set by way of the level and duration of the pulse in such a way, proceeding from the HRS state, they suffice for forming an electrically conducting path through the ion-conducting resistive material at least until the onset of a flow of current through this path, and thus for the transition into a metastable VRS state (volatile resistance state) having a reduced resistance value and a predefined relaxation time for return into the HRS state, but not for transition into the LRS state. In this way, it is ensured that, in all cases, the memory cell once is again in the same state after the read-out as it was prior to the read-out. This allows in particular memory elements that are composed of an antiserial circuit composed of two memory cells to be read out non-destructively, without this diminishing the option of implementing large arrays composed of these memory elements.

Method for reading out a resistive memory cell and a memory cell for carrying out the method

A method for reading out a non-volatile memory element having at least two stable states 0 and 1. This memory element comprises at least one resistive memory cell, which encodes the two states 0 and 1 into a state HRS having higher electrical resistance and a state LRS having lower electrical resistance. In the two states 0 and 1, the memory element has differing capacitances C; this difference is used to determine which state is present. A memory element is selected in which a fixed capacitance that is independent of the state of the memory cell is connected in series with the memory cell. A series connection of a resistive memory cell with a fixed capacitance, instead of with a second resistive memory cell, improves the signal strength during capacitive read-out. The second memory cell becomes indispensable for the memory function when the memory element is read out capacitively. Moreover memory elements were developed which combine a field effect transistor or a DRAM structure with a resistive memory cell or an antiserial series connection of such memory cells.

Method for capacitively reading resistive memory elements and nonvolatile, capacitively readable memory elements for implementing the method

A method for reading out a memory element comprises a series connection. of at least two memory cells A and B each have a stable state A0 or B0 having higher resistance and a stable state A1 or B1 having lower electrical resistance. An electrical variable of the series circuit is measured and an electrical variable is selected for this measurement, to which the memory cell A in state A0 makes a different contribution than the memory cell B in state B0 and/or to which the memory cell A instate A1 makes a different contribution than the memory cell B in state B1. The two state combinations A1 and B0 or A0 and B1 then result in differing values for the electrical variable that is measured by way of the series circuit. These state combinations can thus be distinguished from each other without having to change the logic state of the memory element during reading.

Method for nondestructively reading resistive memory elements

Disclosed is a memory element, a stack, and a memory matrix in which the memory element can be used. Also disclosed is a method for operating the memory matrix, and to a method for determining the true value of a logic operation in an array comprising memory elements. The memory element has at least a first stable state 0 and a second stable state 1. By applying a first write voltage V, this memory element can be transferred into the high-impedance state 0 and by applying a second write voltage V, it can be transferred into the likewise high-impedance state 1. By applying a read voltage V, the magnitude of which is smaller than the write voltages Vand V, the memory element exhibits different electrical resistance values. In the parasitic current paths occurring in a memory matrix, the memory element acts as a high-impedance resistor, without in principle being limited to unipolar switching. A method has been disclosed, using an array comprising the memory elements which can be turned into a gate for arbitrary logic operations.

Memory element, stacking, memory matrix and method for operation

In a method for producing ferroelectric strontium bismuth tantalate having the composition Sr Bi Ta O (SBT) or Sr Bi (Ta, Nb) O (SBTN), the element strontium, which is normally present in an amount y&equals;2, is provided in excess in a range from 2.1&lE;y&lE;3.0. This makes it possible to carry out the heat treatment step for converting the deposited material into the ferroelectric phase at a temperature T , which is lower than 700&deg; C. In addition, the strontium content x can be reduced from a nominal value of 1 to 0.7.

Low-temperature processing of a ferroelectric strontium bismuth tantalate layer, and fabrication of ferroelectric components using the layer

A structural arrangement for NO sensors including a first selectively oxygen ion-conductive layer and a second gas-permeable, nonconductive layer, the latter having a porous spinel structure or porous platinum. The oxygen ion-conductive layer made from a mixed-conductive ceramic can have an additional layer of a material which is catalytically inactive to NO .

Composition structure for NOx sensors

A load-dependent, preventive fuse with an electronic ceramic (12) in a housing (11) from which connection leads (14) are led outwards to detect at least a first type of load to which a device to be monitored is subjected, in which fuse use is made of a ceramic material, hereinafter referred to as TDR ceramic (12), whose electrically insulating state changes as a function of time, being the first type of load, and as a function of a second type of load, to a semiconducting state, and as a result thereof, when a dc voltage U is applied to the TDR ceramic (12) via connection leads (14) an increase in current forms the activation criterion for the fuse, which criterion is fulfilled under predeterminable conditions and determines a desired operating time .tau..

Load-dependent preventive fuse

Fine, monodisperse oxide powders can be manufactured by means of a method which does not require expensive production facilities, in which method

Method of manufacturing a fine monodisperse oxide powder, a fine

A method of manufacturing monolayer capacitors having a ferroelectric layer on the basis of titanium as a dielectric on a substrate, the ferroelectric layer being located between a first and a second noble metal electrode, in which the ferroelectric layer is formed as a barium titanate layer having a layer thickness in the range of from 0.2 to 0.6 .mu.m in that a stable solution of salts of carbonic acids, alkoxides and/or acetyl acetonates is applied and is thermally decomposed at temperatures in the range of from 500.degree. to 700.degree. C., the solution constituting the ferroelectric layer being adjusted so that after the thermal decomposition process an excess quantity of titanium oxide of about 1 mol. % is obtained, and this coating process being repeated until the desired layer thickness is attained, after which the second noble metal electrode is provided on the ferroelectric layer.

Method of manufacturing mono-layer capacitors

Growing community of inventors

Aachen, Germany

Rainer M Waser