International Business Machines Corporation

Rainer Loesing

Kangguo Cheng

Chengwen Pei

Dominic Joseph Schepis

Roger Allen Booth, Jr

Abhishek Dube

Ashima B Chakravarti

Xiaojun Yu

Jinghong Li

A method for depositing epitaxial films of silicon carbon (Si:C). In one embodiment, the method includes depositing an n-type doped silicon carbon (Si:C) semiconductor material on a semiconductor deposition surface using a deposition gas precursor composed of a silane containing gas precursor, a carbon containing gas precursor, and an n-type gas dopant source. The deposition gas precursor is introduced to the semiconductor deposition surface with a hydrogen (H) carrier gas. The method for depositing epitaxial films may include an etch reaction provided by hydrogen chloride (HCl) gas etchant and a hydrogen (H) carrier gas.

Epitaxial growth of silicon doped with carbon and phosphorus using hydrogen carrier gas

A method is provided for making a resistive polycrystalline semiconductor device, e.g., a poly resistor of a microelectronic element such as a semiconductor integrated circuit. The method can include: (a) forming a layered stack including a dielectric layer contacting a surface of a monocrystalline semiconductor region of a substrate, a metal gate layer overlying the dielectric layer, a first polycrystalline semiconductor region adjacent the metal gate layer having a predominant dopant type of either n or p, and a second polycrystalline semiconductor region spaced from the metal gate layer by the first polycrystalline semiconductor region and adjoining the first polycrystalline semiconductor region; and (b) forming first and second contacts in conductive communication with the second polycrystalline semiconductor region, the first and second contacts being spaced apart so as to achieve a desired resistance. In a variation thereof, an electrical fuse is formed which includes a continuous silicide region through which a current can be passed to blow the fuse. Some of the steps of fabricating the poly resistor or the electrical fuse can be employed simultaneously in fabricating metal gate field effect transistors (FETs) on the same substrate.

Polysilicon resistor and E-fuse for integration with metal gate and high-k dielectric

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Newburgh, NY, United States of America

Rainer Loesing