Globalfoundries Inc.

Max-planck-gesellschaft Zur F&#xf6;rderung Der Wissenschaften E. V.

Rainer Giedigkeit

Jan Hoentschel

Sven Beyer

Stephan Kronholz

Matthias Lehr

Maciej Wiatr

Patrick Press

Michael Grillberger

Robert Schlögl

Robert Schloegl

Kirill Kovnir

Juri Grin

Marc Armbruester

Marc Armbruster

Juergen Osswald

Thorsten Kessler

Rolf E Jentoft

Thorsten Ressler

Kirilll Kovnir

Marc Armbrüster

In a multiple gate transistor, the plurality of Fins of the drain or source of the transistor are electrically connected to each other by means of a common contact element, wherein enhanced uniformity of the corresponding contact regions may be accomplished by an enhanced silicidation process sequence. For this purpose, the Fins may be embedded into a dielectric material in which an appropriate contact opening may be formed to expose end faces of the Fins, which may then act as silicidation surface areas.

Multiple gate transistor having homogenously silicided fin end portions

When forming critical threshold adjusting semiconductor alloys and/or strain-inducing embedded semiconductor materials in sophisticated semiconductor devices, at least the corresponding etch processes may be monitored efficiently on the basis of mechanically gathered profile measurement data by providing an appropriately designed test structure. Consequently, sophisticated process sequences performed on bulk semiconductor devices may be efficiently monitored and/or controlled by means of the mechanically obtained profile measurement data without significant delay. For example, superior uniformity upon providing a threshold adjusting semiconductor alloy in sophisticated high-k metal gate electrode structures for non-SOI devices may be achieved.

Test structure for controlling the incorporation of semiconductor alloys in transistors comprising high-k metal gate electrode structures

In a reflow process for connecting a semiconductor die and a package substrate, the temperature gradient and thus the thermally induced mechanical forces in a sensitive metallization system of the semiconductor die may be reduced during the cooling phase. To this end, one or more heating intervals may be introduced into the cooling phase, thereby efficiently reducing the temperature difference. In other cases, the central region may additionally be cooled by providing appropriate locally restricted mechanisms, such as a locally restricted gas flow and the like. Consequently, desired short overall process times may be obtain without contributing to increased yield losses when processing sophisticated metallization systems on the basis of a lead-free contact regime.

Reduction of mechanical stress in metal stacks of sophisticated semiconductor devices during die-substrate soldering by an enhanced cool down regime

Selective hydrogenation of unsaturated hydrocarbon compounds, e.g. of acetylene to ethylene, uses a hydrogenation catalyst comprising an ordered intermetallic compound. The ordered intermetallic compound comprises at least one metal of type A capable of activating hydrogen, and at least one metal of type B not capable of activating hydrogen. The structure of the ordered intermetallic compound is such that the type A metal is mainly surrounded by atoms of the type B metal.

Hydrogenation process using catalyst comprising ordered intermetallic compound

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Dresden, Germany

Rainer Giedigkeit