Osram Opto Semiconductors Gmbh

Osram Oled Gmbh

Osram Opto Semiconductor Gmbh

Osram Oledgmbh

Rainer Butendeich

Ralph Wirth

Matthias Peter

Tobias Meyer

Tetsuya Taki

Alexander Walter

Joachim Hertkorn

Juergen Off

Christian Leirer

Hubert Maiwald

Reiner Windisch

Ion Stoll

David J O'Brien

Andreas Biebersdorf

Martin Strassburg

Christian Rumbolz

Anton Vogl

Stefan Illek

Matthias Sabathil

Lutz Höppel

Stefan Lange

Norbert Linder

Ulrich Zehnder

Andreas Löffler

Gertrud Kräuter

Ines Pietzonka

Jürgen Off

Andreas Plössl

Martin Mandl

Hailing Cui

Jörg Frischeisen

Andreas Plößl

Alexander Baumgartner

Philipp Pust

Andreas Leber

Bernd Mayer

Ralph Bertram

Thomas Bauer

Marcus Adam

An optoelectronic component may include a radiation-emitting semiconductor chip configured to emit electromagnetic radiation and a phosphor mixture. The excitation spectrum may have a peak wavelength ranging from 435 nm to 460 nm. The phosphor mixture may have three phosphors configured to emit electromagnetic radiation in different spectral ranges.

Phosphor mixture, conversion element and optoelectronic component

A phosphor combination may include a first phosphor and a second phosphor. The second phosphor may be a red-emitting quantum dot phosphor. The phosphor combination may optionally include a third phosphor that is a red-emitting phosphor with the formula (MB) (TA)3-2x(TC)1+2xO4-4xN4x:E. A conversion element may include the phosphor combination. An optoelectronic device may include the phosphor combination and a radiation-emitting semiconductor chip.

Luminophore combination, conversion element, and optoelectronic device

An optoelectronic component includes a semiconductor chip that emits primary radiation from the blue spectral region, a conversion element including at least three phosphors each converting the primary radiation into secondary radiation, wherein the first phosphor emits secondary radiation from the green spectral region, the second phosphor emits secondary radiation from the red spectral region, the third phosphor is a potassium-silicon-fluoride phosphor that emits secondary radiation from the red spectral region, and the component has an Ra value of at least 80 and an R9 value of at least 75, and emits white mixed radiation.

Optoelectronic component

A method of operating a semiconductor light source, wherein the semiconductor light source includes at least one first light source that generates blue light; at least one second light source that generates bluish-white light; at least one third light source that produces greenish-white light; at least one fourth light source that generates red light, wherein no further light sources are present, the light sources can be controlled independently of one another, the light sources are operated in a continuous wave mode and not by pulse width modulation, and the semiconductor light source is operated such that all in all white mixed light having a tunable correlated color temperature is generated, and each of the light sources is operated exclusively with at least 5% of an intended maximum current in the switched-on state of the semiconductor light source so that an undercurrent operation of the light sources is prevented.

Method of operating a semiconductor light source, and semiconductor light source

The invention relates to an optoelectronic element comprising a semiconductor chip () that emits a blue-green light () during operation and has at least one light passage surface () through which the blue-green light () emitted during operation passes and comprising a conversion element () which comprises fluorescent particles (), in particular fluorescent particles of only one type, and which is arranged on the light passage surface () at least in some areas. The fluorescent particles () at least partly convert the blue-green light () into a red light (), and the optoelectronic element emits a white mixed light () which contains non-converted components of the blue-green light () and components of the red light ().

Optoelectronic element and optoelectronic component

An optoelectronic semiconductor chip is disclosed. In an embodiment the optoelectronic semiconductor chip includes a first semiconductor layer sequence having a plurality of microdiodes, and a second semiconductor layer sequence having an active region. The first semiconductor layer sequence and the second semiconductor layer sequence are based on a nitride compound semiconductor material, the first semiconductor layer sequence is before the first semiconductor layer sequence in the direction of growth, and the microdiodes form an ESD protection for the active region.

Optoelectronic semiconductor chip and method for fabrication thereof

A semiconductor chip includes a semiconductor body with a semiconductor layer sequence. An active region intended for generating radiation is arranged between an n-conductive multilayer structure and a p-conductive semiconductor layer. A doping profile is formed in the n-conductive multilayer structure which includes at least one doping peak.

Light-emitting semiconductor chip

A method for producing a thin-film semiconductor body is provided. A growth substrate is provided. A semiconductor layer with funnel-shaped and/or inverted pyramid-shaped recesses is epitaxially grown onto the growth substrate. The recesses are filled with a semiconductor material in such a way that pyramid-shaped outcoupling structures arise. A semiconductor layer sequence with an active layer is applied on the outcoupled structures. The active layer is suitable for generating electromagnetic radiation. A carrier is applied onto the semiconductor layer sequence. At least the semiconductor layer with the funnel-shaped and/or inverted pyramid-shaped recesses is detached, such that the pyramid-shaped outcoupling structures are configured as projections on a radiation exit face of the thin-film semiconductor.

Thin-film semiconductor body with electronmagnetic radiation outcoupling structures

An optoelectronic semiconductor chip has a first semiconductor layer sequence which comprises a multiplicity of microdiodes, and a second semiconductor layer sequence which comprises an active region. The first semiconductor layer sequence and the second semiconductor layer sequence are based on a nitride compound semiconductor material, the first semiconductor layer sequence is before the first semiconductor layer sequence in the direction of growth, and the microdiodes form an ESD protection for the active region.

An arrangement () for generating white light (), having at least two light-emitting diodes, wherein the first diode () is designed to generate blue light, wherein a conversion element () is associated with the first diode, wherein the conversion element is designed to convert a part of the blue light from the first diode into green light, and wherein the conversion element is designed to convert a part of the blue light from the first diode into red light, wherein the second diode () is provided to emit red light.

Light-emitting diode arrangement for generating white light

A luminescence conversion element for wavelength conversion of primary electromagnetic radiation into secondary electromagnetic radiation includes first luminescent material particles that, when excited by the primary electromagnetic radiation, emit a first electromagnetic radiation, a peak wavelength of which is at least 515 nm to at most 550 nm of a green region of the electromagnetic spectrum; second luminescent material particles that, when excited by the primary electromagnetic radiation, emit a second electromagnetic radiation, a peak wavelength of which is at least 595 nm to at most 612 nm of a yellow-red region of the electromagnetic spectrum; and third luminescent material particles that, when excited by the primary electromagnetic radiation, emit a third electromagnetic radiation, a peak wavelength of which is at least 625 nm to at most 660 nm of a red region of the electromagnetic spectrum.

Luminescence conversion element and optoelectronic semiconductor component comprising such a luminescence conversion element and method of producing same

A method for producing a thin-film semiconductor body is provided. A growth substrate is provided. A semiconductor layer with funnel-shaped and/or inverted pyramid-shaped recesses is epitaxially grown onto the growth substrate. The recesses are filled with a semiconductor material in such a way that pyramid-shaped outcoupling structures arise. A semiconductor layer sequence with an active layer is applied on the outcoupled structures. The active layer is suitable for generating electromagnetic radiation. A carrier is applied onto the semiconductor layer sequence. At least the semiconductor layer with the funnel-shaped and/or inverted pyramid-shaped recesses is detached, such that the pyramid-shaped outcoupling structures are configured as projections on a radiation exit face of the thin-film semiconductor body.

Method for producing a thin-film semiconductor body and thin-film semiconductor body

A radiation-emitting semiconductor chip having a semiconductor layer sequence based on a nitride compound semiconductor material and having a pn junction includes a first protective layer having deliberately introduced crystal defects, a second protective layer having a higher doping than the first protective layer, wherein the first protective layer protects the semiconductor chip against electrostatic discharge pulses, an active zone that generates radiation disposed downstream of the first protective layer in a growth direction, wherein during operation of the semiconductor chip, a breakdown behavior of the semiconductor layer sequence in a reverse direction in regions having crystal defects differs from regions without crystal defects, and wherein in the event of electrostatic discharge pulses, electrical charge is dissipated in a homogeneously distributed manner via the regions having crystal defects.

Radiation-emitting semiconductor chip having integrated ESD protection

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Wuppertal, Germany

Rainer Butendeich