Carl Zeiss Sms Ltd.

Carl Zeiss Smt Gmbh

Rainer Becker

Klaus Edinger

Thorsten Hofmann

Nicole Auth

Petra Spies

Christof Baur

Gabriel Baralia

Kinga Kornilov

Hans Hermann Pieper

Michael Budach

Tristan Bret

The present invention relates to methods and devices for extending a time period until changing a measuring tip of a scanning probe microscope. In particular, the invention relates to a method for hardening a measuring tip for a scanning probe microscope, comprising the step of: Processing the measuring tip with a beam of an energy beam source, the energy beam source being part of a scanning electron microscope.

Methods and devices for extending a time period until changing a measuring tip of a scanning probe microscope

The invention relates to a method for electron beam induced etching of a material () with the method steps providing at least one etching gas at a position of the material () at which an electron beam impacts on the material () and simultaneously providing at least one passivation gas which is adapted for slowing down or inhibiting a spontaneous etching by the at least one etching gas.

Method for electron beam induced etching

The invention relates to a method for electron beam induced etching of a layer contaminated with gallium, with the method steps of providing at least one first halogenated compound as an etching gas at the position at which an electron beam impacts on the layer, and providing at least one second halogenated compound as a precursor gas for removing of the gallium from this position.

Method for electron beam induced etching of layers contaminated with gallium

The present method relates to processes for the removal of a material from a sample by a gas chemical reaction activated by a charged particle beam. The method is a multiple step process wherein in a first step a gas is supplied which, when a chemical reaction between the gas and the material is activated, forms a non-volatile material component such as a metal salt or a metaloxide. In a second consecutive step the reaction product of the first chemical reaction is removed from the sample.

Methods and systems for removing a material from a sample

The invention relates to a method for electron beam induced deposition of electrically conductive material from a metal carbonyl with the method steps of providing at least one electron beam at a position of a substrate, storing at least one metal carbonyl at a first temperature, and heating the at least one metal carbonyl to at least one second temperature prior to the provision at the position at which the at least one electron beam impacts on the substrate.

Method for electron beam induced deposition of conductive material

An apparatus and a method for investigating and/or modifying a sample is disclosed. The apparatus comprises a charged particle source, at least one particle optical element forming a charged particle beam of charged particles emitted by said charged particle source. The apparatus further comprises an objective lens which generates a charged particle probe from said charged particle beam. The objective lens defines a particle optical axis. A first electrostatic deflection element is arranged&#x2014;in a direction of propagation of charged particles emitted by said charged particle source&#x2014;downstream of the objective lens. The electrostatic deflection element deflecting the charged particle beam in a direction perpendicular to said charged particle optical axis and has a deflection bandwidth of at least 10 MHz.

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Pfungstadt, Germany

Rainer Becker