Infineon Technologies Ag

Siemens Aktiengesellschaft

Infineon Technologies Austria Ag

Siemens Aktiengellschaft

Rainald Sander

Jenoe Tihanyi

Ludwig Leipold

Roland Weber

Chihao Xu

Alfons Graf

Veli Kartal

Josef-Matthias Gantioler

Markus Winkler

Ralf Otremba

Markus Zundel

Klaus Schiess

Matthias Stecher

Michael Asam

Steffen Thiele

Joachim Mahler

Andreas Peter Meiser

Till Schloesser

Teck Sim Lee

Thomas Bemmerl

Stephan Leisenheimer

Hubert Rothleitner

Reimund Engl

Jens-Peer Stengl

Frank Auer

Stefan Mieslinger

Thomas Behrens

Liu Chen

Christian Arndt

Frank Kahlmann

Helmut Hertrich

Holger Heil

Xaver Schl&ouml;gel

Robert Oyrer

Axel Christoph

Nance: Paul

Wolfgang Kuebler

Martin Bertele

Detlef Kalz

A semiconductor device includes a first chip pad, a power semiconductor chip arranged on the first chip pad and including at least a first and a second power electrode, and a clip connected to the first power electrode. In this case, an integral part of the clip forms a shunt resistor and a first contact finger of the shunt resistor is embodied integrally with the clip.

Semiconductor device with integrated shunt resistor

This disclosure is directed to techniques that may accurately determine the amount of current flowing through a power switch circuit by measuring the voltage across the inherent impedance of the circuit connections. One connection may include a low impedance connection between the power switch output and ground, where the low impedance connection may be on the order of milliohms. By using a four-wire measurement, the sensing connections are not in the current path, so the measured value may not be affected by the current. The connection that makes up the current path can be accomplished with a variety of conductive materials. Conductive materials may have a temperature coefficient of resistivity that may impact a measurement of electric current as the temperature changes. Measuring the temperature of the current path, along with the voltage across the connection, may allow a more accurate current measurement.

Configuration of integrated current flow sensor

An electric circuit includes a semiconductor device. The semiconductor device includes a first transistor and a second transistor in a common semiconductor substrate. The first transistor is of the same conductivity type as the second transistor. A first source region of the first transistor is electrically connected to a first source terminal via a first main surface of the semiconductor substrate. A second drain region of the second transistor is electrically connected to a second drain terminal via a first main surface of the semiconductor substrate. A first drain region of the first transistor and a second source region of the second transistor are electrically connected to an output terminal via a second main surface of the semiconductor substrate. The electric circuit further includes a control circuit operable to control a first gate electrode of the first transistor and a second gate electrode of the second transistor.

Electric circuit including a semiconductor device with a first transistor, a second transistor and a control circuit

A package which comprises an electrically conductive chip carrier, a first chip comprising a first connection terminal, a second connection terminal located on the chip carrier and a control terminal, a second chip comprising a first connection terminal, a second connection terminal located on the chip carrier and a control terminal, wherein the first chip and the second chip are connected to form a half bridge having inlet terminals and an outlet terminal, and a clip having three connection sections connecting the second connection terminal of the first chip with the first connection terminal of the second chip and with the outlet terminal of the half bridge.

Transistor package with three-terminal clip

In accordance with an embodiment, an electronic circuit includes a first transistor device, at least one second transistor device, and a drive circuit. The first transistor device is integrated in a first semiconductor body, and includes a first load pad at a first surface of the first semiconductor body and a control pad and a second load pad at a second surface of the first semiconductor body. The at least one second transistor device is integrated in a second semiconductor body, and includes a first load pad at a first surface of the second semiconductor body and a control pad and a second load pad at a second surface of the second semiconductor body. The first load pad of the first transistor device and the first load pad of the at least one second transistor device are mounted to an electrically conducting carrier.

Electronic switching and reverse polarity protection circuit

A transistor is disclosed that includes a semiconductor body having a first horizontal surface. A drift region is arranged in the semiconductor body. A plurality of gate electrodes is arranged in trenches of the semiconductor body. The trenches have a longitudinal direction and extending parallel relative to each other. The longitudinal direction of the trenches extends in a first lateral direction of the semiconductor body. The body regions and the source regions are arranged between the trenches. The body regions are arranged between the drift region and the source regions in a vertical direction of the semiconductor body. In the first horizontal surface, the source regions and the body regions are arranged alternately in the first lateral direction. A source electrode is electrically connected to the source regions and the body regions in the first horizontal surface.

Vertical transistor with improved robustness

A circuit includes an electronic switch with an isolated gate, a measuring device for determining a charge at the isolated gate, and an energy supply for providing charge to the isolated gate based on the charge determined by the measuring device.

Circuitry and method for operating an electronic switch

In an embodiment, a switching circuit includes input drain, source and gate nodes, a high voltage depletion mode transistor including a current path coupled in series with a current path of a low voltage enhancement mode transistor, and an overheating detection circuit for detecting overheating of the switching circuit.

Switching circuit

A semiconductor arrangement may include a multiplicity of semiconductor elements with controlling paths and controlled paths, the controlled paths having controllable conductivities and being connected parallel to each other. The semiconductor arrangement may also include a current evaluation circuit configured to measure current strengths of currents present in the controlled paths and to provide a signal representing the sum of the measured current strengths, and a control circuit connected to the controlling paths and configured to control the conductivities of the controlled paths in accordance with an input signal and the signal representing the sum of the current strengths. The at least one controlled path is controlled to have minimum conductivity if the signal representing the sum of the current strengths is below a threshold value.

Current measurement and control of a semiconductor element based on the current measurement in a power semiconductor arrangement

In an embodiment, a switching circuit includes input drain, source and gate nodes, a high voltage depletion mode transistor including a current path coupled in series with a current path of a low voltage enhancement mode transistor, and a current sense circuit for sensing the current flowing through a current sense path.

The present invention relates to a circuit arrangement having the following features: a load transistor having a control connection and a first and second load connection; a drive connection coupled to the control connection of the load transistor and serving for the application of a drive signal; a voltage limiting circuit connected between one of the load connections and the drive connection of the transistor; and a deactivation circuit connected to the voltage limiting circuit and serving for the deactivation of the voltage limiting circuit in a manner dependent on a deactivation signal, which is dependent on a load current through the load transistor and/or on a drive voltage of the load transistor.

Circuit arrangement having a load transistor and a voltage limiting circuit and method for driving a load transistor

An integrated circuit device includes a semiconductor chip and a control chip at different supply potentials. A lead chip island includes an electrically conductive partial region and an insulation layer. The semiconductor chip is arranged on the electrically conductive partial region of the lead chip island and the control chip is cohesively fixed on the insulation layer.

Integrated circuit device and method for the production thereof

A power circuit includes a power transistor for feeding a load current to a load, a measuring transistor for coupling out a measurement current dependent on the load current, at least two coupling transistors for dividing the measurement current into an internal measurement current and into an external measurement current, wherein the external measurement current can be fed to an external evaluation circuit, and the internal measurement current is fed to an internal evaluation circuit for evaluation. A third coupling transistor can be coupled to the measuring transistor if a measuring device determines a non-coupled state, and the third coupling transistor can be decoupled from the measuring transistor if the measuring device determines a coupled state. The measuring device determines the coupled state if the external evaluation device is coupled to the power circuit, and the measuring device determines a non-coupled state if the external evaluation device is not coupled to the power circuit.

Power switch with an overcurrent protection device

Growing community of inventors

Munich, Germany

Rainald Sander