Osram Opto Semiconductors Gmbh

Osram Gmbh

Osram Gesellschaft MIT Beschraenkter Haftung

Raimund Oberschmid

Andreas Weimar

Berthold Hahn

Volker Härle

Uwe Strauss

Johannes Baur

Franz Eberhard

Ulrich Zehnder

Georg Bogner

Dominik Eisert

Norbert Stath

Ernst Nirschl

Karl-Heinz Schlereth

Olaf Schoenfeld

Gerald Neumann

Siegmar Kugler

Frank Jermann

Martin Zachau

Norbert Linder

Ewald Karl Michael Guenther

Michael Fehrer

Markus Richter

Dirk Berben

Wolfgang Gramann

Roland Zeisel

Johannes Völkl

Ulrich Jacob

Werner Späth

Martin Moeck

Anton Vogl

Robert Schulz

Jörg Strauss

Werner Plass

Wolfgang Teich

Michael Dietz

Volker HÄRLE

A method can be used for measuring at least one optoelectronic component arranged on a connection carrier. The method includes exciting an electromagnetic oscillating circuit, which is formed by the optoelectronic component and the connection carrier, thus exciting the optoelectronic component in such a way that the optoelectronic component emits electromagnetic radiation, and measuring at least one electro-optical property of the optoelectronic component.

Method and device for measuring and optimizing an optoelectronic component

A luminous device with a semiconductor light source and a light-transmissive converter element including a wavelength-converting phosphor sensitive to the light emitted by the semiconductor light source is disclosed. The semiconductor light source can be at least partly covered by the converter element and the converter element is movable such that the proportion of light which is wavelength-converted by the converter element is adjustable depending on the position of the converter element.

Luminous device and method for operating a luminous device

An optoelectronic component with a semiconductor body that comprises an active semiconductor layer sequence is disclosed, which is suitable for generating electromagnetic radiation of a first wavelength that is emitted from a front face of the semiconductor body. The component also comprises a first wavelength conversion substance following the semiconductor body in its direction of emission, which converts radiation of the first wavelength into radiation of a second wavelength different from the first wavelength, and a first selectively reflecting layer between the active semiconductor layer sequence and the first wavelength conversion substance that selectively reflects radiation of the second wavelength and is transparent to radiation of the first wavelength.

Optoelectronic component

In a luminescence diode chip having a radiation exit area () and a contact structure () which is arranged on the radiation exit area () and comprises a bonding pad () and a plurality of contact webs () which are provided for current expansion and are electrically conductively connected to the bonding pad (), the bonding pad () is arranged in an edge region of the radiation exit area (). The luminescence diode chip has reduced absorption of the emitted radiation () in the contact structure ().

Light-emitting diode chip comprising a contact structure

A thin-film LED comprising an active layer () made of a nitride compound semiconductor, which emits electromagnetic radiation () in a main radiation direction (). A current expansion layer () is disposed downstream of the active layer () in the main radiation direction () and is made of a first nitride compound semiconductor material. The radiation emitted in the main radiation direction () is coupled out through a main area (), and a first contact layer () is arranged on the main area (). The transverse conductivity of the current expansion layer () is increased by formation of a two-dimensional electron gas or hole gas. The two-dimensional electron gas or hole gas is advantageously formed by embedding at least one layer () made of a second nitride compound semiconductor material in the current expansion layer ().

Thin film LED comprising a current-dispersing structure

A method for producing an optoelectronic component is disclosed. The method includes the steps of providing a substrate, applying a semiconductor layer sequence to the substrate, applying at least two current expansion layers to the semiconductor layer sequence, applying and patterning a mask layer, patterning the second current expansion layer by means of an etching process during which sidewalls of the mask layer are undercut, patterning the first current expansion layer by means of an etching process during which the sidewalls of the mask layer are undercut at least to a lesser extent than during the patterning of the second current expansion layer, and removing the mask layer.

Method for producing an optoelectronic component

The invention concerns a light-emitting diode chip comprising a radiation-emitting active region and a window layer. To increase the luminous efficiency, the cross-sectional area of the radiation-emitting active region is smaller than the cross-sectional area of the window layer available for the decoupling of light. The invention is further directed to a method for fabricating a lens structure on the surface of a light-emitting component.

High radiance LED chip and a method for producing same

An optoelectronic component having a semiconductor chip containing a semiconductor layer sequence () with a radiation-emitting active zone (), the semiconductor layer sequence () having sidewalls (). A connection contact () is provided for impressing current into the active zone. A first current expansion layer () adjoins a semiconductor layer () of the semiconductor layer sequence () and a second current expansion layer () is provided between the semiconductor layer sequence () and the connection contact (). The first current expansion layer () has a larger sheet resistance than the second current expansion layer () and forms an ohmic contact with the adjoining semiconductor layer (). The second current expansion layer () is applied to a partial region of the first current expansion layer () which is at a distance from the sidewalls ().

Optoelectronic component having a plurality of current expansion layers and method for producing it

The invention concerns a light-emitting diode chip () comprising a radiation-emitting active region () and a window layer (). To increase the luminous efficiency, the cross-sectional area of the radiation-emitting active region () is smaller than the cross-sectional area of the window layer () available for the decoupling of light. The invention is further directed to a method for fabricating a lens structure on the surface of a light-emitting component.

High radiance led chip and a method for producing same

A measuring arrangement for measuring product parameters of a component in the epitaxial layer () of a wafer comprises measuring probe () on whose contact side () a recess () is installed, into which an electrolyte can be poured. The electrolyte produces an electrical connection between a contact body (), which is charged with a signal from a pulsed-current source, and the surface () of the wafer (). A detector () serves for detecting the light which is emitted by the component.

Method for measuring product parameters of components formed on a wafer and device for performing the method

A light-emitting chip () has a lens-type coupling-out window (), whose base area () is provided with a mirror area (). Arranged on a coupling-out area () of the coupling-out window () is a layer sequence (), with a photon-emitting pn junction (). The photons emitted by the pn junction are reflected at the mirror area () and can leave the coupling-out window () through the coupling-out area ().

Radiation-emitting chip

Growing community of inventors

Sinzing, Germany

Raimund Oberschmid