Basf Se Corporation

Basf Aktiengesellschaft

Raimund Mellies

Andreas Klipp

Rudolf Rhein

Marc Boerner

Andrea Barko

Vijay Immanuel Raman

Shyam Sundar Venkataraman

Mingjie Zhong

Thomas Goelzenleuchter

Lucia Arnóld

Martin Fluegge

Marianne Schwager

Ruediger Oesten

Marc BÖRNER

Martin Flügge

Aqueous, nitrogen-free cleaning composition, preparation and use thereof are provided. The composition having a pH of from 5 to 8 comprises (A) an amphiphilic nonionic, water-soluble or water-dispersible surfactant and (B) a metal chelating agent selected from polycarboxylic acids having at least 3 carboxylic acid groups. The composition is used for removing residues and contaminants from semiconductor substrates.

Aqueous, nitrogen-free cleaning composition and its use for removing residues and contaminants from semiconductor substrates suitable for manufacturing microelectronic devices

The aqueous alkaline cleaning composition comprising (A) at least one thioamino acid having at least one secondary or tertiary amino group and at least one mercapto group and (B) at least one quaternary ammonium hydroxide; the use of the alkaline cleaning composition for the processing of substrates useful for fabricating electrical and optical devices; and a method for processing substrates useful for fabricating electrical and optical devices making use of the said aqueous alkaline cleaning composition.

Aqueous alkaline cleaning compositions and methods of their use

Aqueous alkaline composition free from organic solvents and metal ion-free silicates, the said compositions comprising (A) a thioamino acid having at least one primary amino group and at least one mercapto group, (B) a quaternary ammonium hydroxide, (C) a chelating and/or corrosion inhibiting agent selected from the group consisting of aliphatic and cycloaliphatic amines having at least two primary amino groups, and aliphatic and cycloaliphatic amines having at least one hydroxy group, (D) a nonionic surfactant selected from the group of acetylenic alcohols, alkyloxylated acetylenic alcohols and alkyloxylated sorbitan monocarboxylic acid mono esters; the use of the alkaline composition for the processing of substrates useful for fabricating electrical and optical devices; and a method for processing substrates useful for fabricating electrical and optical devices making use of the said aqueous alkaline composition.

The present invention relates to new storage-stable solutions which can be used in semiconductor technology to effect specific etching of copper metallization layers and also Cu/Ni layers. With the new etch solutions it is possible to carry out etching and patterning of all-copper metallizations, layers of copper/nickel alloys, and also successive copper and nickel layers.

Stabilized etching solutions for CU and CU/NI layers

The present invention relates to a novel solution for the removal of post-etch residues having improved properties and to the use thereof in the production of semiconductors. The invention relates, in particular, to an aqueous solution having a reduced etching rate on metallisations and on surfaces which have to be freed from post-etch residues and particles during the semiconductor production process.

Aqueous solution for removing post-etch residue

A composition for the production of semiconductors, comprising H2SiF6 and/or HBF4 in a total amount of 10-500 mg/kg, 1-17 % by weight of H2S04, 1-15% by weight of H202, optionally in combination with additives, in aqueous solution and a process of removing residual polymers using the composition.

Composition for the removal of sidewall residues

The present invention relates to a composition for the removal of so-called 'sidewall residues' from metal surfaces, in particular from aluminium or aluminium-containing surfaces, in particular from aluminium or aluminium-containing surfaces, during the production of semiconductor elements.

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Dieburg, Germany

Raimund Mellies