Infineon Technologies Ag

Infineon Technologies Austria Ag

Raimund Foerg

Anton Mauder

Guenther Ruhl

Wolfgang Lehnert

Rudolf Berger

Hans-Joachim Schulze

Hermann Gruber

Roland Rupp

Michael Bernhard Sommer

Karsten Kellermann

Christian Rottmair

Bernhard Winkler

Klemens Pruegl

Thomas Popp

Roland Meier

Frank Dieter Pfirsch

Gottfried Beer

Juergen Hoegerl

Carsten Ahrens

Thomas Fischer

Irmgard Escher-Poeppel

Stefan Sedlmaier

Peter Scherl

Thomas Kunstmann

Michael Larisch

Klaus Koller

Maria Heidenblut

Eduard Knauer

Walter Preis

Sebastian Bernrieder

Kai-Olaf Subke

Embodiments relate to microelectromechanical systems (MEMS) and more particularly to membrane structures comprising pixels for use in, e.g., display devices. In embodiments, a membrane structure comprises a monocrystalline silicon membrane above a cavity formed over a silicon substrate. The membrane structure can comprise a light interference structure that, depending upon a variable distance between the membrane and the substrate, transmits or reflects different wavelengths of light. Related devices, systems and methods are also disclosed.

Membrane structures for microelectromechanical pixel and display devices and systems, and methods for forming membrane structures and related devices

A composite wafer is manufactured by providing a carrier wafer including graphite and a protective layer, forming a bonding layer, and bonding the carrier wafer to a semiconductor wafer through the bonding layer.

Method for manufacturing a composite wafer having a graphite core, and composite wafer having a graphite core

A semiconductor device includes a semiconductor chip and a plurality of electrical contact pads disposed on a main face of the semiconductor chip, wherein the electrical contact pads each include a layer stack, each layer stack having one and the same order of layers, and wherein the electrical contact pads are both solderable and bondable.

Semiconductor device having solderable and bondable electrical contact pads

An embodiment method for fabricating electronic devices having two components connected by a metal layer includes applying a metal layer to each component and connecting the metal layers such that a single metal layer is formed.

Electronic device and method for fabricating an electronic device

An electrical or electronic device is disclosed. In some embodiments, an electrical device includes a single-layer graphene part extending in a lateral direction and a multi-layer graphene structure laterally contacting the single-layer graphene part. The electrical or electronic device further includes a graphite part in contact with a surface of the multi-layer graphene structure. In other embodiments, an electrical device includes a graphene part extending in a lateral direction and a graphite part is configured to provide a lateral contact for the graphene part.

Electrical contact for graphene part

An etching device is provided, the etching device including a process chamber including an etchant, a structure configured to provide a laminar flow of the etchant, and a workpiece handler configured to move a workpiece through the laminar flow of the etchant along a predefined track.

Etching device and a method for etching a material of a workpiece

A composite wafer including a carrier substrate having a graphite core and a monocrystalline semiconductor substrate or layer attached to the carrier substrate and a corresponding method for manufacturing such a composite wafer is provided.

Method for manufacturing a composite wafer having a graphite core

According to an embodiment, a composite wafer includes a carrier substrate having a graphite layer and a monocrystalline semiconductor layer attached to the carrier substrate.

According to an embodiment, a composite wafer includes a carrier substrate having a graphite core and a monocrystalline semiconductor layer attached to the carrier substrate.

Disclosed is a method of structuring a material surface by dry etching, so that a passivation layer soluble in a solvent forms by the dry etching on parts of the structured material surface, sealing the passivation layer with a substance soluble in the solvent, and removing the sealed passivation layer and the substance by means of the solvent.

Method of etching a material surface

A method for producing a semiconductor including a material layer. In one embodiment a trench is produced having two opposite sidewalls and a bottom, in a semiconductor body. A foreign material layer is produced on a first one of the two sidewalls of the trench. The trench is filled by epitaxially depositing a semiconductor material onto the second one of the two sidewalls and the bottom of the trench.

Method for producing a semiconductor including a foreign material layer

A capacitor device includes a substrate, a first conductive structure, a second conductive structure, a dielectric layer structure, and a recess in the substrate. The first and second conductive structures are disposed on opposite sides of the dielectric layer structure, and the dielectric layer structure extends in a meander-shaped manner in a cross-section through the recess.

Growing community of inventors

Straubing, Germany

Raimund Foerg