Micron Technology Incorporated

Rahul Mitchell Jairaj

Terry M Grunzke

Mark A Hawes

Ryan G Fisher

Devices and techniques to recover data from a memory device are disclosed, including recovering data corresponding to a detected error in data stored on a memory array corresponding to a memory operation using one of a set of read offset values and loading the one of the set of read offset values used to recover data corresponding to the detected error in a temporary storage of the memory array as a custom read offset value for a subsequent memory operation. The temporary storage of the memory array can include a scratch space of the memory array separate from read retry offset registers of the memory device.

Read retry scratch space

Devices and techniques to recover data from a memory device using a custom Read Retry feature are disclosed herein. A memory device can receive a first read request, read data from the memory array corresponding to the read request, and determine if the read data corresponding to the first read request includes a detectable error. In response to a detected error in the received data corresponding to the first read request, the memory device can recover data corresponding to the first read request using one of a set of read retry features, and load the one of the set of read retry features used to recover data corresponding to the first read request as a custom read retry feature in the memory device for a second read request subsequent to the first read request.

A memory sub-system comprises a number of memory components and a processing device configured to move data stored in the number of memory components based, at least partially, on a stress profile corresponding to the number of memory components.

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Boise, ID, United States of America

Rahul Mitchell Jairaj