Arizona State University

Soitec

Rahul Ajay Trivedi

Chantal Arena

Christiaan J Werkhoven

Ronald Thomas Bertram, Jr

Ed Lindow

Subhash Mahajan

Ilsu Han

Ranjan Datta

This invention provides methods for fabricating substantially continuous layers of a group III nitride semiconductor material having low defect densities and optionally having a selected crystal polarity. The methods include epitaxial growth nucleating and/or seeding on the upper portions of a plurality of pillars/islands of a group III nitride material that are irregularly arranged on a template structure. The upper portions of the islands have low defect densities and optionally have a selected crystal polarity. The invention also includes template structures having a substantially continuous layer of a masking material through which emerge upper portions of the pillars/islands. The invention also includes such template structures. The invention can be applied to a wide range of semiconductor materials, both elemental semiconductors, e.g., combinations of Si (silicon) with strained Si (sSi) and/or Ge (germanium), and compound semiconductors, e.g., group II-VI and group III-V compound semiconductor materials.

Epitaxial methods and templates grown by the methods

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Tempe, AZ, United States of America

Rahul Ajay Trivedi