Texas Instruments Corporation

Agilent Technologies Texas Instruments Incorporated

Rahim Kavari

Scott Robert Summerfelt

Shawming Ma

Guoqiang Xing

Tomoyuki Sakoda

Luigi Colombo

Theodore Sidney Moise

Stephen Roy Gilbert

Jun Amano

Alvin L S Loke

Laura Wills-Mirkarimi

An embodiment of the instant invention is a method of fabricating a ferroelectric capacitor which is situated over a structure, the method comprising the steps of: forming a bottom electrode on the structure ( of FIG. ), the bottom electrode having a top surface and sides; forming a capacitor dielectric ( of FIG. ) comprised of a ferroelectric material on the bottom electrode, the capacitor dielectric having a top surface and sides; forming a top electrode ( and of FIG. ) on the capacitor dielectric, the top electrode having a top surface and sides, the ferroelectric capacitor is comprised of the bottom electrode, the capacitor dielectric, and the top electrode; forming a barrier layer ( and of FIG. ) on the side of the bottom electrode, the side of the capacitor dielectric, and the side of the top electrode; forming a dielectric layer on the barrier layer and the structure, the dielectric having a top surface and a bottom surface; and performing a thermal step for a duration at a temperature between 400 and 900 C. in an ambient comprised of a gas selected from the group consisting of: argon, nitrogen, and a combination thereof, the step of performing a thermal step being performed after the step of forming the barrier layer.

Method of fabricating a ferroelectric memory cell

An embodiment of the instant invention is a method of forming a conductive contact to a top electrode ( and of FIG. ) of a ferroelectric capacitor comprised of a bottom electrode ( of FIG. ) situated under the top electrode and a ferroelectric material ( of FIG. ) situated between the top electrode and the bottom electrode, the method comprising the steps of: forming a layer ( or of FIG. ) over the top electrode; forming an opening ( of FIG. ) in the layer to expose a portion of the top electrode by etching the opening into the layer using a hydrogen-free etchant; and depositing conductive material ( of FIG. ) in the opening to form an electrical connection with the top electrode.

Hydrogen-free contact etch for ferroelectric capacitor formation

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Campbell, CA, United States of America

Rahim Kavari