Intel Corporation

Ragupathy V Giridhar

Yi-Ching Lin

Philip E Freiberger

Farhad K Moghadam

Brett E Huff

Brian A Kaiser

Haiping Dun

A method of forming a device and the device itself that utilizes a high density plasma-enhanced TEOS-based intermetal dielectric is disclosed. The high density is accomplished though the use of higher RF power and higher oxygen flow rate so that the TEOS is more completely oxidized. The higher density intermetal dielectric absorbs water from air slower than a standard intermetal dielectric film. This lower water absorbance reduces the amount of water in the device and reduces hot electron induced device degradation.

High density TEOS-based film for intermetal dielectrics

Methods of forming a semiconductor substrate and a device oriented substantially along a crystal direction other than a crystal direction that falls along a cleavage plane and the substrate and device formed by each method are disclosed. An ingot of monocrystalline material is formed and marked to denote a crystal direction other than a crystal direction that falls along a cleavage plane. The ingot is lapped to form a semiconductor substrate having a mark denoting a crystal direction other than a crystal direction that falls along a cleavage plane. A device is formed on the semiconductor substrate having a monocrystalline layer, such that a field oxide-active area edge or a gate electrode lies substantially along a crystal direction other than a crystal direction that falls along a cleavage plane. The present invention may be used on any device where dislocation defects, a lateral diffusion, or a lateral oxidation is to be minimized.

Device and substrate orientation for defect reduction and transistor

A method of forming a device having an intermetal dielectric film which is formed and annealed to prevent a significant quantity of ambient moisture from being absorbed by the intermetal dielectric film prior to passivation layer deposition is disclosed. An intermetal dielectric layer is formed over a substrate having a interconnection layer. A second interconnect layer is formed over the IMD layer. The substrate with the intermetal dielectric is annealed anytime between IMD formation and passivation layer deposition to produce a film that does not absorb a significant quantity of ambient moisture, and therefore, longer queue times can be utilized between the anneal and subsequent processing. The present invention reduces the amount of water in the device which reduces hot electron induced device degradation.

Growing community of inventors

San Jose, CA, United States of America

Ragupathy V Giridhar