Average Co-Inventor Count = 4.24
ph-index = 32
The patent ph-index is calculated by counting the number of publications for which an author has been cited by other authors at least that same number of times.
Company Filing History:
1. Sandisk Technologies Inc. (218 from 4,434 patents)
2. Sandisk 3d LLC (15 from 669 patents)
3. Rensselaer Polytechnic Institute (1 from 604 patents)
4. Pohang University of Science and Technology Foundation (1 from 49 patents)
234 patents:
1. 12453088 - Three-dimensional memory device including discrete charge storage elements and methods of forming the same
2. 12426267 - Three-dimensional memory device and method of making thereof using sacrificial material regrowth
3. 12387976 - Method of making a three-dimensional memory device using composite hard masks for formation of deep via openings
4. 12376299 - Three-dimensional memory device with intermetallic barrier liner and methods for forming the same
5. 12362301 - Bonded memory devices and methods of making the same
6. 12363905 - Memory device containing composition-controlled ferroelectric memory elements and method of making the same
7. 12356627 - Memory device containing composition-controlled ferroelectric memory elements and method of making the same
8. 12347773 - Three-dimensional memory device containing variable thickness word lines with reduced length metal nitride diffusion barriers and methods for forming the same
9. 12342537 - Three-dimensional memory device containing epitaxial pedestals and top source contact
10. 12317502 - Three-dimensional memory device containing ferroelectric-assisted memory elements and method of making the same
11. 12289889 - Three-dimensional memory device containing templated crystalline ferroelectric memory elements and method of making thereof
12. 12267998 - Three-dimensional memory device including discrete charge storage elements and methods of forming the same
13. 12261080 - Method of making a three-dimensional memory device using composite hard masks for formation of deep via openings
14. 12255242 - Three-dimensional memory device including vertical stack of tubular graded silicon oxynitride portions
15. 12245434 - Method of making a three-dimensional memory device using composite hard masks for formation of deep via openings