Intel Corporation

Neophotonics Corporation

Lsi Logic Corporation

Lsi Corporation

Santur Corporation

Raghuram Narayan

Ting Zhou

Tieyu Zheng

David Warland

Judith C Powelson

Chengkun Chen

Marcel G Boudreau

Milind Gokhale

Maxime Poirier

Kunjithapatham Balasubramanian

Sylvain M Colin

Owen B Pine

Jason M Stinebaugh

Hans Henry Hieslmair

John Heck

Quan Anh Tran

Timothy Learmonth

Matthew Charles Bashaw

Bardia Pezeshki

Raiyomand F Aspandiar

Ankur Agrawal

Michael P O'Neill

Jeffrey B Driscoll

Susheel G Jadhav

Terrence L Wong

Syed S Islam

Gregory A McDermott

Woosung Kim

Kenneth Brown

Sang Yup Kim

Priyanka Dobriyal

Aditi Mallik

Syed Reza Bahadur

Bharadwaj Parthasarathy

Hyoung-Jun Kim

Chen Zhuang

Hwee Chin Ong

A semiconductor package comprises a substrate and a ceramic carrier mounted to the substrate. An integrated circuit (IC) die is mounted to the ceramic carrier. A heat extraction path away from the IC die comprises: i) a thermal interface material over the IC die, the thermal interface material having a thickness of approximately 25 to 80 um; ii) an integrated heat spreader over the thermal interface material; iii) a ceramic carrier plate over the integrated heat spreader; and iv) an electrically conductive thermal pad between the ceramic carrier plate and a housing of the semiconductor package.

Heat extraction path from a laser die using a highly conductive thermal interface material in an optical transceiver

Optical modulators are described having a Mach-Zehnder interferometer and a pair of RF electrodes interfaced with the Mach-Zehnder interferometer in which the Mach-Zehnder interferometer comprises optical waveguides formed from semiconductor material. The optical modulator also comprises a ground plane spaced away in a distinct plane from transmission line electrodes formed from the association of the pair of RF electrodes interfaced with the Mach-Zehnder interferometer. The ground plane can be associated with a submount in which an optical chip comprising the Mach-Zehnder interferometer and the pair of RF electrodes is mounted on the submount with the two semiconductor optical waveguides are oriented toward the submount. Methods for forming the modulators are described.

High frequency optical modulator with laterally displaced conduction plane relative to modulating electrodes

Embodiments disclosed herein include optoelectronic systems and methods of forming such systems. In an embodiment the optoelectronic system comprises a board, and a carrier attached to the board. In an embodiment, a first die is on the carrier. In an embodiment, the first die is a photonics die, and a surface of the first die is covered by an optically transparent layer.

Silicon photonic integrated lens compatible with wafer processing

Embodiments may relate to a segment driver that is to be coupled with a modulator segment of a Mach-Zehnder modulator. The segment driver may include a continuous-time linear equalizer (CTLE) incorporated within an amplifier stage of the modulator. The CTLE may be configured to identify an electrical signal that is related to an optical signal of the Mach-Zehnder modulator; reduce inter-symbol interference (ISI) of the electrical signal to generate a processed electrical signal; and output the processed electrical signal to the amplifier stage. Other embodiments may be described or claimed.

Mach-Zehnder modulator driver

Embodiments may relate to an optical modulator system. The optical modulator system may include a first photodiode to measure a first optical level at an output of a Mach-Zehnder modulator (MZM). The system may further include a second photodiode to measure a second optical level at a termination of the MZM. The system may further include a logic coupled with the first photodiode and the second photodiode, the logic to identify a modulator bias that minimizes the first optical level. Other embodiments may be described or claimed.

Optical modulator-based transmission control

Many approaches to tunable lasers use an array of DFBs, where each element of the array has a different wavelength. In some operations one element of the array is activated at a time depending on the desired wavelength. For modulated applications, an RF voltage is applied to a specific element of the DFB array, generally using an RF switch. In standard configurations, the demands on the switch are relatively difficult, generally requiring low RF insertion loss and good high frequency performance to 10 GHz. The DFB arrays are generally common cathode or common anode, depending on the type of the substrate used to fabricate the devices. Described herein is an array with a common cathode or anode configuration using a MEMS based switch that shorts the selected laser to RF ground. With this topology, preferably the off-state capacitance should be low with the MEMS switch.

Modulated semiconductor DFB laser array with a MEMS-based RF switch

A method of writing a mark to an optical disc includes receiving data to be written and generating a control signal for a laser pulse having a melt period that transitions to a growth period wherein the melt period is characterized by a melt power and the growth period is characterized by a growth power.

Advanced high density data write strategy

External cavity optical transmitters are disclosed which include a gain chip and a mirror that define an optical cavity. The optical cavity may include collimating lenses, electro-optic crystals for controlled phase shift, and additional frequency selective optical components such as a grating and/or an etalon. The external cavity laser is capable of lasing at any of the specified ITU wavelengths (frequencies) in the L, C, or any other band in the optical spectrum. The optical transmitter is wavelength tuned by a lens mounted on an actuator.

External cavity tunable optical transmitters

A package for housing an optoelectronic device and an integrated circuit is disclosed. The package includes an insulating base having an upper surface. The optoelectronic device and the integrated circuit are mounted to the upper surface of the insulating base. The package also includes a metal sealing member having a top wall and a bottom wall. The bottom wall of the metal sealing member is attached to the upper surface of the insulating base. The package further includes a metal cover having a rim located at a bottom portion thereof. The rim of the metal cover is adapted to attach to the top wall of the metal sealing member to thereby hermetically seal the metal cover to the insulating base.

Package for housing an optoelectronic assembly

A method of manufacturing an optoelectronic packaging comprises placing a solder preform between a metal cover and an insulating base, applying pressure to the metal cover and the insulating base, and applying a current through multiple conductive vias to heat the solder preform to melt.

Method and apparatus for manufacturing a transistor-outline (TO) can having a ceramic header

External cavity optical transmitters are disclosed which include a gain chip and a mirror that define an optical cavity. The transmitters further include a modulator operated at or near the same temperature as the gain chip. In some examples, the optical transmitters are temperature controlled to optimize the efficiency and wavelength stability thereof, while maintaining acceptable chirp performance of the modulator. In some examples, the optical transmitters include an electro-optic module disposed within the optical cavity to change the path length thereof so that the efficiency and wavelength stability of the transmitter is optimized.

Optical transmitters

Wavelength lockers, which monitor the wavelength drift of a laser's beam due to aging, are tunable to adjust for manufacturing misalignments between its various optical components. Tuning is accomplished by adjusting the position of a collimating lens using a flexure. Adjusting the lens position changes the angle of incidence of a monitored beam relative to a fixed filter and detector and avoids the challenging manufacturing task of rotating the filter and detector to achieve the same result.

Back facet wavelength locker tuning and assembly method

Growing community of inventors

Fremont, CA, United States of America

Raghuram Narayan