Xilinx, Inc.

Apple Inc.

Solaria Corporation

Xilnix, Inc.

Raghunandan Chaware

Inderjit Singh

Ganesh Hariharan

Glenn O'Rourke

Lan H Hoang

Amitava Majumdar

Arifur Rahman

Matthew H Klein

Kumar Nagarajan

Takayoshi Katahira

Ephrem C Wu

Leilei Zhang

Chang Liu

Eric Thorne

Abhay Maheshwari

Nael Zohni

Shin S Low

Frank Magana

Laurene Yip

David E Schweigler

Shirish Shah

Junaid Fatehi

Enrico Casaje

Techniques for singulating dies from a respective workpiece and for incorporating one or more singulated die into a stacked device structure are described herein. In some examples, singulating a die from a workpiece includes chemically etching the workpiece in a scribe line. In some examples, singulating a die from a workpiece includes mechanically dicing the workpiece in a scribe line and forming a liner along a sidewall of the die. The die can be incorporated into a stacked device structure. The die can be attached to a substrate along with another die that is attached to the substrate. An encapsulant can be between each die and the substrate and laterally between the dies.

Die singulation and stacked device structures

A chip package assembly and method for fabricating the same are provided which utilize a stiffener to improve a package substrate against out of plane deformation. In one example, a chip package assembly is provided that includes a package substrate, at least one integrated circuit (IC) die and a stiffener. The package substrate has a first surface and a second surface coupled by a side wall. The at least one IC die is disposed on the first surface of the package substrate. The stiffener is disposed outward of the at least one IC die. The stiffener has a first surface disposed outward of and bonded to the side wall of the package substrate. The stiffener has a second surface bonded to at least one of the first and second surfaces of the package substrate.

Stacked silicon package assembly having enhanced stiffener

Frames and other structures for system-in-package modules that may allow components on boards in the modules to communicate with each other.

Interconnect frames for SIP modules

Stacked circuit board structures are described. In an embodiment, a plurality of vertical devices serves as electrical interconnections between the first circuit board and the second circuit board. In an embodiment, a plurality of vertical interconnects or pins serve as electrical interconnections between the first circuit board and the second circuit board. The vertical interconnects or pins may be arranged side-by-side with a plurality of vertical or horizontal devices.

Vertical module and perpendicular pin array interconnect for stacked circuit board structure

A method for fabricating integrated circuit (IC) dies and wafers having such dies, are disclosed herein that leverage temporary connection traces during wafer level testing of the functionality of the IC die. In one example, a wafer includes a plurality of IC dies. At least a first IC die of the plurality of IC dies includes a plurality of micro-bumps and a first temporary connection trace formed on an exterior surface of the die body. The plurality of micro-bumps includes at least a first micro-bump and a second micro-bump. The first temporary connection trace electrically couples the first micro-bump and the second micro-bump.

Temporary connection traces for wafer sort testing

Methods and apparatus are described for creating a multi-die package from a wafer without dicing the wafer into individual dies and reassembling the dies on an interposer. One example method generally includes testing a plurality of IC dies disposed on a wafer; disposing one or more connectivity layers above the plurality of IC dies, the one or more connectivity layers comprising one or more electrical conductors configured to connect together two or more of the plurality of dies in each of one or more groups of the IC dies; dicing the wafer having the one or more connectivity layers disposed above the plurality of dies into sets, each set comprising one or more of the plurality of dies, wherein the dicing is based on the one or more groups having IC dies that passed the testing; and packaging at least a portion of the sets of dies.

Multi-die wafer-level test and assembly without comprehensive individual die singulation

A method and a probe device for testing an interposer prior to assembly are described herein. The method includes coupling a plurality of probe tips of a probe device to the plurality of signal interconnect paths of the interposer to be tested. A test signal is provided from the probe device to the plurality of signal interconnect paths of the interposer and a quality characteristic of signal interconnect paths of the interposer is detected based on behavior of the interposer in response to the test signal.

Method and apparatus for testing interposer dies prior to assembly

An example method of manufacturing a semiconductor assembly includes: forming first integrated circuit (IC) dies and dummy dies; forming an interposer wafer including a top side having first mounting sites for the first IC dies and second mounting sites for second IC dies; attaching the first IC dies to the interposer wafer at the first mounting sites and the dummy dies to the interposer wafer at the second mounting sites; processing a backside and the top side of the interposer wafer; removing the dummy dies from the top side of the interposer wafer to expose the second mounting sites; and attaching the second IC dies to the interposer wafer at the exposed second mounting sites.

Heterogeneous integration of integrated circuit device and companion device

Techniques for providing a semiconductor assembly having an interconnect die for die-to-die interconnection, an IC package, a method for manufacturing, and a method for routing signals in an IC package are described. In one implementation, a semiconductor assembly is provided that includes a first interconnect die coupled to a first integrated circuit (IC) die and a second IC die by inter-die connections. The first interconnect die includes solid state circuitry that provides a signal transmission path between the IC dice.

Interposer-less stack die interconnect

A method and apparatus are provided which improve the adhesion of a lid to an IC die of an IC (chip) package. In one embodiment, a chip package assembly is provided that includes an IC die, a package substrate and a lid. The IC die is coupled to the package substrate. The lid has a first surface and a second surface. The second surface of the lid faces away from the first surface and towards the IC die. The second surface of the lid has a plurality of engineered features. The adhesive couples the plurality of engineered features of the lid to the IC die.

Stacked silicon package assembly having enhanced lid adhesion

A method for providing charge protection to a die during formation of an integrated circuit, includes bonding the die to an interposer to form an unprotected stacked silicon component; encapsulating the unprotected stacked silicon component with a mold compound to cover at least a top surface of the die; grinding the mold compound to reduce a thickness of the mold compound; bonding a carrier wafer to the mold compound; removing the carrier wafer from the mold compound; and removing the mold compound from the top surface of the die after the carrier wafer is removed from the mold compound, to expose the top surface of the die.

Method for providing charge protection to one or more dies during formation of a stacked silicon device

A testable circuit arrangement includes an integrated circuit (IC) package. The IC package includes a package substrate, an interposer mounted directly on the package substrate with level 1 interconnects, and at least one IC die mounted directly on the interposer with level 0 interconnects. The package substrate of the IC package is mounted directly on a connector board with a soldered ball grid array of level 2 interconnects. The level 0, level 1, and level 2 interconnects include respective power, configuration, and test interconnects. Power, configuration, and test terminals of the connector board are coupled to the power, configuration, and test interconnects of the level 2 interconnects.

Integrated circuit package testing

A method for removing bumps from incomplete interposer die(s) and/or defective interposer die(s) of an interposer wafer is described. The method includes forming bumps on an interposer wafer; identifying at least one incomplete interposer die and/or at least one defective interposer die of the interposer wafer; and removing bumps from the at least one incomplete interposer die and/or the at least one defective interposer die of the interposer wafer.

Method for removing bumps from incomplete and defective interposer dies for stacked silicon interconnect technology (SSIT) devices

In one or more embodiments, a semiconductor structure is provided that includes a plurality of interposer dice on an un-singulated segment of a semiconductor wafer. Scribe lanes circumscribing each of the plurality of interposer dice have widths of at least 2.5% of the width of each interposer die. Each interposer die includes a first contact array formed on a first side of the interposer die, a plurality of vias formed through the interposer die, one or more wiring layers formed on the first side of the interposer die and electrically coupling the first contact array to the plurality of vias, and a second contact array formed on a second side of the interposer die and electrically coupled to the plurality of vias.

Semiconductor structure and method for interconnection of integrated circuits

A method for forming a laminated photovoltaic structure includes providing a sheet of transparent material having light concentrating features, disposing adhesive material adjacent to the sheet of transparent material, disposing photovoltaic strips adjacent to the adhesive material, wherein the photovoltaic strips are positioned relative to the sheet of transparent material in response to exitant light characteristics of the light concentrating features, wherein photovoltaic strips are coupled via associated bus bars, wherein gap regions are located between bus bars of neighboring photovoltaic strips, disposing a rigid layer of material adjacent to the photovoltaic strips to form a composite photovoltaic structure; and thereafter laminating the composite photovoltaic structure to fill the gap regions with adhesive material and to form the laminated photovoltaic structure, wherein adhesive material adheres to the bus bars.

Growing community of inventors

Sunnyvale, CA, United States of America

Raghunandan Chaware