Qualcomm Incorporated

Raghu Sagar Madala

Wenqing Wu

Senthil Kumar Govindaswamy

Kendrick Hoy Leong Yuen

Peiyuan Wang

Kendrick H Yuen

Seung Hyuk Kang

Jung Pill Kim

Karim Arabi

David Joseph Winston Hansquine

Xia Li

Sharad Deepak Sambhwani

Xiaochun Zhu

Jeffrey Alexander Levin

Robert P Gilmore

Chengzhi Pan

Abhishek Banerjee

Zhenyu Sun

Sean Li

Senthil Govindaswamy

Embodiments described herein are related to contactless data communication. Related systems and methods for contactless data communication are disclosed herein. For example, a magnetic field-based contactless transmitter is disclosed that includes a substrate, a pair of dipole coils disposed on the substrate, and a drive circuit electrically coupled to the pair of dipole coils. To transmit data to a magnetic tunnel junction (MTJ) receiver disposed on a second substrate, the drive circuit is configured to drive the pair of dipole coils so as to generate a magnetic field in-plane to the MTJ receiver. Data can be transmitted from the magnetic field-based contactless transmitter to the MTJ receiver using the magnetic field.

Contactless data communication using in-plane magnetic fields, and related systems and methods

Systems and methods are directed to a memory element comprising a hybrid giant spin Hall effect (GSHE)-spin transfer torque (STT) magnetoresistive random access memory (MRAM) element, which includes a GSHE strip formed between a first terminal (A) and a second terminal (B), and a magnetic tunnel junction (MTJ), with a free layer of the MTJ interfacing the GSHE strip, and a fixed layer of the MTJ coupled to a third terminal (C). The orientation of the easy axis of the free layer is perpendicular to the magnetization created by electrons traversing the GSHE strip between the first terminal and the second terminal, such that the free layer of the MTJ is configured to switch based on a first charge current injected from/to the first terminal to/from the second terminal and a second charge current injected/extracted through the third terminal into/out of the MTJ via the third terminal (C).

High density low power GSHE-STT MRAM

A method and apparatus for generating random binary sequences from a physical entropy source having a state A and a state B by detecting whether the physical entropy source is in the state A or in the state B, attempting to shift the state of the physical entropy source to the opposite state in a probabilistic manner with less than 100% certainty, and producing one of four outputs based on the detected state and the state of the physical entropy source before the attempted shift. The outputs are placed in first and second queues and extracted in pairs from each queue. Random binary bits are output based on the sequences extracted from each queue.

Method and apparatus for generating random numbers using a physical entropy source

A magnetic tunneling junction non-volatile register with feedback for robust read and write operations. In an embodiment, two MTJ devices are configured to store a logical 0 or a logical 1, and are coupled to drive an output node to a voltage indicative of the stored logical 0 or a logical 1. The output of a D flip-flop is fed to the two MTJ devices so that the state of the D flip-flop may be stored in the two MTJ devices during a store operation. During a read operation, the D flip-flop outputs the state of the two MTJ devices. Read disturbances are mitigated with the use of an edge detector coupled to the output node, so that a LOW voltage is provided to the D flip-flop if a rising voltage at the output node is detected.

Magnetic tunneling junction non-volatile register with feedback for robust read and write operations

Sensor circuitry including probabilistic switching devices, such as spin-transfer torque magnetic tunnel junctions (STT-MTJs), is configured to perform ultra-low power analog to digital conversion and compressive sensing. The analog to digital conversion and compressive sensing processes are performed simultaneously and in a manner that is native to the devices due to their probabilistic switching characteristics.

Spin torque transfer magnetic tunnel junction intelligent sensing

The present patent application discloses a method and apparatus for using external and internal memory for cancelling traffic interference comprising storing data in an external memory; and processing the data samples on an internal memory, wherein the external memory is low bandwidth memory; and the internal memory is high bandwidth on board cache. The present method and apparatus also comprises caching portions of the data on the internal memory, filling the internal memory by reading the newest data from the external memory and updating the internal memory; and writing the older data back to the external memory from the internal memory, wherein the data is incoming data samples.

Waveform caching for data demodulation and interference cancellation at a node B

A multi-free layer magnetic tunnel junction (MTJ) cell includes a bottom electrode layer, an anti-ferromagnetic layer on the bottom electrode layer, a fixed magnetization layer on the anti-ferromagnetic layer and a barrier layer on the fixed magnetization layer. A first free magnetization layer is on a first area of the barrier layer, and a capping layer is on the first free magnetization layer. A free magnetization layer is on a second area of the barrier layer, laterally displaced from the first area, and a capping layer is on the second free magnetization layer. Optionally current switches establish a read current path including the first free magnetization layer concurrent with not establishing a read current path including the second free magnetization layer. Optionally current switches establishing a read current path including the first and second free magnetization layer.

Multi-free layer MTJ and multi-terminal read circuit with concurrent and differential sensing

Growing community of inventors

San Diego, CA, United States of America

Raghu Sagar Madala