Abb Schweiz Ag

Abb Technology Ag

Abb Research Ltd.

Abb Power Grids Switzerland Ag

Raffael Schnell

Munaf Rahimo

Arnost Kopta

Ulrich Schlapbach

Falah Hosini

Slavo Kicin

Olle Ekwall

Erik Doré

Christoph Von Arx

Franc Dugal

Liutauras Storasta

Nicola Schulz

Madhan Mohan

Siva Nagi Reddy Pamulapati

A semiconductor assembly includes a stack with a semiconductor module and a cooler, wherein the semiconductor module is provided in contact with the cooler. A clamping assembly is adapted to exert a force on the two sides of the stack. The stack is provided with a through hole between the two sides thereof and a part of the clamping assembly including an electrically conductive part which extends through the through hole of the stack. Thereby, a compact mechanical arrangement is provided while obtaining improved electrical properties, such as lower inductance and more even current distribution.

Semiconductor assembly having a press pack stack

A reverse-conducting insulated gate bipolar transistor, particularly a bi-mode insulated gate transistor, is controlled by responding to an ON command by applying high-level gate voltage for a first period, during which a current is fed into a connection point, from which it flows either through the RC-IGBT or along a different path. Based hereon, it is determined whether the RC-IGBT conducts in its forward/IGBT or reverse/diode mode, and the RC-IGBT is either driven at high or low gate voltage. Subsequent conduction mode changes may be monitored in the same way, and the gate voltage may be adjusted accordingly. A special turn-off procedure may be applied in response to an OFF command in cases where the RC-IGBT conducts in the reverse mode, wherein a high-level pulse is applied for a second period before the gate voltage goes down to turn-off level.

Intelligent gate driver for IGBT

A semiconductor device which provides a small and simple design with efficient cooling. A first electrically conducting cooling element is in contact with first electrodes of semiconductor elements for forwarding a heat load from the semiconductor elements and for electrically connecting the first electrodes of the semiconductor elements to an external apparatus. A second electrically conducting cooling element is in contact with second electrodes of the semiconductor elements for forwarding a heat load from the semiconductor elements and for electrically connecting the second electrodes of the semiconductor elements to an external apparatus. The semiconductor device includes an interface which is electrically connected to gates of the semiconductor elements for external control of respective states of the semiconductor elements.

Semiconductor device

A reverse-conducting semiconductor device is disclosed with an electrically active region, which includes a freewheeling diode and an insulated gate bipolar transistor on a common wafer. Part of the wafer forms a base layer with a base layer thickness. A first layer of a first conductivity type with at least one first region and a second layer of a second conductivity type with at least one second and third region are alternately arranged on the collector side. Each region has a region area with a region width surrounded by a region border. The RC-IGBT can be configured such that the following exemplary geometrical rules are fulfilled: each third region area is an area, in which any two first regions have a distance bigger (i.e., larger) than two times the base layer thickness; the at least one second region is that part of the second layer, which is not the at least one third region; the at least one third region is arranged in the central part of the active region in such a way that there is a minimum distance between the third region border to the active region border of at least once the base layer thickness; the sum of the areas of the at least one third region is between 10 and 30% of the active region; and each first region width is smaller than the base layer thickness.

Reverse-conducting semiconductor device

In the case of an electronic circuit, comprising a drive unit, which generates at least one drive signal, two or more power semiconductor switches each having a first and a second main terminal, which power semiconductor switches can be switched synchronously by the drive signal, the first and the second main terminals of the power semiconductor switches in each case being electrically connected in parallel among one another, for each of the power semiconductor switches a first and a second electrically conductive connection for connection to the drive unit, a uniform dynamic current division between the power semiconductor switches is achieved according to the invention by virtue of the fact that a first inductance is provided in each of the first electrically conductive connections, and a second inductance is provided in each of the second electrically conductive connections, the first inductance being coupled to the second inductance for each of the power semiconductor switches.

Electronic circuit

Growing community of inventors

Seon, Switzerland

Raffael Schnell