Lam Research Ag

Rafal Ryszard Dylewicz

Ivan L Berry, Iii

Andreas Gleissner

Rainer Obweger

Thomas Wirnsberger

Franz Kumnig

Christian Thomas Fischer

Mu Hung Chou

Alessandro Baldaro

Nathan Lavdovsky

David S Mui

Ji Zhu

Reinhold Schwarzenbacher

Milan Pliska

David Lou

Xia Man

Gerome Michel Dominique Melaet

Kenichi Sano

A gas mixture for treating a substrate in a substrate processing system includes hydrogen fluoride gas, a vapor of an alcohol, an additive consisting of a base, and a carrier gas. The gas mixture can be used to treat high aspect ratio (HAR) structures arranged on a surface of a substrate. A surface of the substrate may be spin rinsed using a first rinsing liquid. The first rinsing liquid is spun off from the surface of the substrate. The gas mixture is directed onto the surface of the substrate after the first rinsing liquid is dispensed.

Gas mixture including hydrogen fluoride, alcohol and an additive for preventing stiction of and/or repairing high aspect ratio structures

A device for processing wafer-shaped articles comprises a closed process chamber that provides a gas-tight enclosure. A rotary chuck is located within the closed process chamber. A heater is positioned relative to the chuck so as to heat a wafer shaped article held on the chuck from one side only and without contacting the wafer shaped article. The heater emits radiation having a maximum intensity in a wavelength range from 390 nm to 550 nm. At least one first liquid dispenser is positioned relative to the chuck so as to dispense a process liquid onto a side of a wafer shaped article that is opposite the side of the wafer-shaped article facing the heater.

Method and apparatus for processing wafer-shaped articles

A system for reducing surface and embedded charge in a substrate includes a substrate support configured to support a substrate. A vacuum ultraviolet (VUV) assembly is arranged adjacent to the substrate and includes a housing and a VUV lamp that is connected to the housing and that generates and directs ultraviolet (UV) light at the substrate. A movement device is configured to move at least one of the VUV assembly and the substrate support during exposure of the substrate to the UV light to reduce surface and embedded charge in the substrate.

Reduction of surface and embedded substrate charge by controlled exposure to vacuum ultraviolet (VUV) light in low-oxygen environment

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Villach, Austria

Rafal Ryszard Dylewicz