Nxp B.v.

Rafael Venegas

Stefaan Decoutere

Johannes J T M Donkers

Stefaan Van Huylenbroeck

Guillaume Boccardi

Li Jen Choi

Mark C J C M Kramer

Arturo Sibaja-Hernandez

The invention relates to a semiconductor device () comprising a substrate (), a semiconductor body () comprising a bipolar transistor that comprises a collector region (), a base region (), and an emitter region (), wherein at least a portion of the collector region () is surrounded by a first isolation region (), the semiconductor body () further comprises an extrinsic base region () arranged in contacting manner to the base region (). In this way, a fast semiconductor device with reduced impact of parasitic components is obtained.

Gringo heterojunction bipolar transistor with a metal extrinsic base region

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Heverlee, Belgium

Rafael Venegas