Soraa, Inc.

Koninklijke Philips Corporation N.V.

Philips Lumileds Lighting Company LLC

Other

Lumileds LLC

Soraa Laser Diode, Inc.

Lumileds Holding B.v.

Rafael Ignacio Aldaz

Michael Ragan Krames

Aurelien J F David

Michael Joseph Cich

Frank Michael Steranka

Troy A Trottier

Patrick Nolan Grillot

Christophe A Hurni

Daniel F Feezell

Rajat Sharma

Thomas M Katona

Kevin Huang

Mark Melvin Butterworth

James Gordon Neff

Anneli Munkholm

Hanmin Zhao

Aurelien David

James W Raring

Paul Scott Martin

John Edward Epler

Arpan Chakraborty

Toni Lopez

Serge J Bierhuizen

Grigoriy Basin

Mathew C Schmidt

Andrew Felker

Seshasayee S Ankireddi

Aurelien Jean Francois David

Serge J A Bierhuizen

Nicholas J Pfister

Kenneth John Thomson

Sateria Salim

Tal Margalith

Nicholas Andrew Vickers

Eugene I Chen

Rajarshi Saha

David Press

Deborah L Coblentz

Tai Margalith

Aurelien J David

Rohit Modi

Deborah L Colbentz

James G Neff

Aurelien JF David

Optical devices and methods of manufacturing and operating such optical devices. In an embodiment, an optical device includes a substrate, a multi-layer structure having a first surface in contact with a first surface of the substrate, a first mirror disposed over a second surface of the multi-layer structure, a second mirror disposed over a second surface of the substrate, an intermediate mirror within the multi-layer structure, and an optical gain structure within the multi-layer structure. The device may include a first optically resonant cavity within the multi-layer structure, bounded by the first mirror and the intermediate mirror, where the first optically resonant cavity includes the optical gain structure. The device may further include a second optically resonant cavity, bounded by the first and second mirrors, where the second optically resonant cavity includes the first optically resonant cavity, the second optically reflective layer, and the substrate.

Optical devices and methods of manufacture and operation

High-performance light-emitting diode together with apparatus and method embodiments thereto are disclosed. The light emitting diode devices emit at a wavelength of 390 nm to 470 nm or at a wavelength of 405 nm to 430 nm. Light emitting diode devices are characterized by having a geometric relationship (e.g., aspect ratio) between a lateral dimension of the device and a vertical dimension of the device such that the geometric aspect ratio forms a volumetric light emitting diode that delivers a substantially flat current density across the device (e.g., as measured across a lateral dimension of the active region). The light emitting diode devices are characterized by having a current density in the active region of greater than about 175 Amps/cm.

High-performance LED fabrication

Small LED sources with high brightness and high efficiency apparatus including the small LED sources and methods of using the small LED sources are disclosed.

Small LED source with high brightness and high efficiency

A method of fabricating LEDs from a wafer comprising a substrate and epitaxial layers and having a substrate side and a epitaxial side, said method comprising: (a) applying a laser beam across at least one of said substrate side or said epitaxial side of said wafer to define at least one laser-scribed recess having a laser-machined surface; and (b) singulating said wafer along said laser-scribed recess to form singulated LEDs, said singulated LEDs having a top surface, a bottom surface, and a plurality of sidewalls, at least one of said sidewalls comprising at least a first portion comprising at least a portion of said laser-machined surface.

Methods and devices for light extraction from a group III-nitride volumetric LED using surface and sidewall roughening

In some embodiments of the invention, a transparent substrate AlInGaP device includes an etch stop layer that may be less absorbing than a conventional etch stop layer. In some embodiments of the invention, a transparent substrate AlInGaP device includes a bonded interface that may be configured to give a lower forward voltage than a conventional bonded interface. Reducing the absorption and/or the forward voltage in a device may improve the efficiency of the device.

Light emitting device with bonded interface

Techniques for fabricating and using arrays of violet-emitting LEDs coated with densely-packed-luminescent-material layers together with apparatus and method embodiments thereto are disclosed.

Dense-luminescent-materials-coated violet LEDs

Embodiments of the present disclosures are directed to improved approaches for achieving high-performance light extraction from a Group III-nitride volumetric LED chips. More particularly, disclosed herein are techniques for achieving high-performance light extraction from a Group III-nitride volumetric LED chip using surface and sidewall roughening.

Methods and devices for light extraction from a Group III-nitride volumetric LED using surface and sidewall roughening

A method for forming optical devices includes providing a gallium nitride substrate having a crystalline surface region and a backside region. The backside is subjected to a laser scribing process to form scribe regions. Metal contacts overly the scribe regions.

Method of fabricating optical devices using laser treatment of contact regions of gallium and nitrogen containing material

A shunting pattern on a surface of an LED die comprises an array of metal dots having widths that are on the order of 2Lt-5Lt (where Lt is transfer length) so as not to block a significant amount of light, yet have low contact resistance to the semiconductor current spreading layer. Contact resistance is not significantly reduced with widths greater than 2Lt. Each dot represents a current injection area. For a minimum 2Lt width and 50 square dots per mm2, the top surface area of an LED die will have about 1% of its surface covered by the dots. To cause the current to be evenly distributed over the top surface of the LED, the dots are connected with a grid of very thin metal connectors, having widths much less than 2Lt. In one embodiment, a wire bond electrode is formed near the middle of the top surface of the LED to create a more uniform current distribution.

Shunting layer arrangement for LEDs

Growing community of inventors

Pleasanton, CA, United States of America

Rafael Ignacio Aldaz