Electronics and Telecommunications Research Institute

Rae-Man Park

Jonghyurk Park

Sunglyul Maeng

Sang-Hyeob Kim

Chan Woo Park

Jae Bon Koo

Sang Seok Lee

Ji-Young Oh

Bock Soon Na

Soon-Won Jung

Woo-Seok Cheong

Chul Huh

Kyung Hyun Kim

Tae-Youb Kim

Gun-Yong Sung

Jaeheon Shin

Kyung-Hyun Kim

Jae-Heon Shin

Kwan-Sik Cho

This light emitting paper includes a first transparent electrode, a second transparent electrode on the first transparent electrode, a cellulose layer between the first and second transparent electrodes, and light emitting particles in the cellulose layer. The cellulose layer includes cellulose nanofibrils having nanoscale diameters. Each of the light emitting particles includes one of a metal oxide, a metal sulfide, and a metal sulfur oxide and a dopant doped thereinto.

Light emitting paper and method of forming the same

Provided is a method for manufacturing a stretchable wire, the method including removing a portion of a photoresist layer on a substrate to form a photoresist pattern comprising at least one pattern slit, applying a liquid-phase conductive material on the photoresist pattern to form a liquid-phase conductive structure in the pattern slit, forming a stretchable first insulating layer on the liquid-phase conductive structure, after removing the photoresist pattern, and separating the liquid-phase conductive structure and the first insulating layer from the substrate.

Method for manufacturing stretchable wire and method for manufacturing stretchable integrated circuit

A stretchable wire including a stretchable solid-phase conductive structure; a stretchable insulation layer which surrounds the solid-phase conductive structure; and a liquid-phase conductive material layer disposed between the solid-phase conductive structure and the stretchable insulation layer, and in contact with the solid-phase conductive structure, and a method of fabricating the same.

Stretchable wire and method of fabricating the same

Provided are a low emissivity film and a window having the same. According to an embodiment of the inventive concept, the low emissivity film may include a first substrate, a first metal oxide layer, a first reflective layer, a second metal oxide layer, and a second substrate. The first metal oxide layer may reflect light having a wavelength of infrared rays. The light having a first wavelength is reflected by cavity effect of the first metal oxide layer, the first reflective layer, and the second metal oxide layer, and the light having a second wavelength may pass through the low emissivity film. Thus, the low emissivity film may express a color.

Low emissivity film and window having the same

Provided are a solar cell module and a method of manufacturing the same. The solar cell module including: a substrate; a bottom electrode layer discontinuously formed on the substrate; a light absorbing layer formed on the bottom electrode layer and including a first trench that exposes the bottom electrode layer; and a transparent electrode layer extending from the top of the light absorbing layer to the bottom electrode layer at the bottom of the first trench, and including a first oxide layer, a metal layer, and a second oxide layer, all of which are staked on the light absorbing layer and the bottom electrode layer.

Solar cell module and method of manufacturing the same

Provided are touch screen panels with improved transmittance and methods of fabricating the same. the method may include preparing a substrate including a cell region and an interconnection region provided around the cell region, sequentially forming a first buffer layer and a second buffer layer on the substrate, the second buffer layer having a refractive index less than that of the first buffer layer, and forming a transparent electrode on the second buffer layer. The second buffer layer is formed of a SiOC material.

Touch screen panels and methods of fabricating the same

Methods of manufacturing a solar cell module are provided. The method may include forming lower electrodes on a substrate, forming a light absorption layer on the lower electrodes and the substrate, patterning the light absorption layer to form a trench exposing the lower electrodes, and forming window electrodes using a conductive film. The conductive film extends from a top surface of the light absorption layer to a bottom of the trench along one-sidewall of the trench and is divided at another-sidewall of the trench.

Methods of manufacturing a solar cell module

Provided are methods of fabricating a solar cell and a vacuum deposition apparatus used therefor. The method may include forming a lower electrode on a substrate, forming a light absorption layer on the lower electrode, forming a buffer layer on the light absorption layer, and forming a window electrode layer on the buffer layer. The forming of the buffer layer may include a deposition step of forming a cationic metal material and a diffusion step of diffusing an anionic non-metal material into the cationic metal material.

Methods of manufacturing a solar cell

Provided is a method of manufacturing silicon nanotubes including forming non-catalytic metal islands on a substrate; forming catalyst metal doughnuts to surround the non-catalytic metal islands; and growing silicon nanotubes on the catalyst metal doughnuts. The silicon nanotubes are efficiently grown using the catalyst metal doughnuts.

Method of manufacturing silicon nanotubes using doughnut-shaped catalytic metal layer

Provided is a manufacturing method of a compound semiconductor solar cell. The method includes; preparing a substrate on which a back electrode is disposed, and sputtering a metal target to form a copper indium gallium selenium (CIGS) thin film on the back electrode under an indium (In) deposition gas atmosphere.

Manufacturing method of compound semiconductor solar cell

A gas sensor includes zinc oxide nano-structures formed on a substrate, a plurality of metal islands coated on a surface of each zinc oxide nano-structure and separated from one another, a first electrode electrically connected to one end of each zinc oxide nano-structure through the substrate, a second electrode electrically connected to the other end of each zinc oxide nano-structure, and a current variation-measuring unit electrically connected to each of the first electrode and the second electrode so as to measure a variation in the amount of current flowing between the first electrode and the second electrode. In order to form the plurality of metal islands on the zinc oxide nano-structures, a solution of metal components of a metal material is coated on the surface of each zinc oxide nano-structure.

Gas sensor having zinc oxide nano-structures and method of fabricating the same

Provided is a method of manufacturing silicon nanowires including: forming a silicon nanodot thin film having a plurality of silicon nanodots exposed on a substrate; and growing the silicon nanowires on the silicon nanodot thin film using the silicon nanodots as a nucleation site. The silicon nanowires can be manufactured using the silicon nanodot thin film disposed in a silicon nitride matrix, as a nucleation site instead of using catalytic metal islands, wherein the silicon nanodot thin film includes the silicon nanodots.

Method of manufacturing silicon nanowires using silicon nanodot thin film

Provided is a semiconductor light emitting diode that uses a silicon nano dot and a method of manufacturing the same. The semiconductor light emitting diode includes a light emitting layer that emits light; a hole injection layer formed on the light emitting layer; an electron injection layer formed on the light emitting layer to face the hole injection layer; a metal layer that includes a metal nano dot and is formed on the electron injection layer; and a transparent conductive electrode formed on the metal layer. Amorphous silicon nitride that includes the silicon nano dot is used as the light emitting layer.

Growing community of inventors

Daejeon, South Korea

Rae-Man Park