Nxp B.v.

Koninklijke Philips Corporation N.v.

Interuniversitair Microelektronica Centrum (imec)

Nexperia B.v.

Radu Surdeanu

Viet Nguyen Hoang

Benoit Bataillou

Pascal Bancken

David Van Steenwinckel

Gerben Doornbos

Gian Hoogzaad

Erwin Hijzen

Anco Heringa

Prabhat Agarwal

Viet Nguyen

Mark Van Dal

Vincent Venezia

Youri Victorovitch Ponomarev

Peter G Steeneken

Franciscus Petrus Widdershoven

Jan Sonsky

Peter Hubertus Franciscus Deurenberg

Hendrik Johannes Bergveld

Jan Willem Slotboom

Abraham Rudolf Balkenende

Godefridus A M Hurkx

Wibo Daniel Van Noort

Gilberto Curatola

Damien Lenoble

Gert-Jan Koolen

Yukiko Furukawa

Wilhelmus H M Langeslag

Luc Van Dijk

Kirklen Henson

Michael Zandt

Erik P A M Bakkers

Pascal Brancken

Hans Schmitz

Raymond Josephus Hueting

An active thermal management device and method, in which a phase change material unit, comprising at least one phase change material arranged in series or parallel, is connectable to a source of thermal energy, such as LEDs at a first operating condition. Thermal energy from the source of thermal energy is stored in the phase change material unit. The phase change material unit is connectable to a sink of thermal energy, such as second LEDs at a second operating condition. The thermal energy stored in the phase change material unit may be re-used. The first operating condition can include a 15V supply voltage, and the second operating condition can include either no supply voltage, or a lower 9V supply voltage of 9V, such that heat from the first LEDs, which may be over-temperature, can pre-heat the second LEDs, improving thermal and optical matching.

Active thermal management device and thermal management method

A semiconductor device comprising: a substrate having: a first terminal region; a second terminal region; a first extension region that extends from the first terminal region towards the second terminal region; a second extension region that extends from the second terminal region towards the first terminal region; a channel region between the first and second extension regions; a gate conductor that overlies the channel region of the substrate, the gate conductor configured to control conduction in the channel region; a first control conductor that overlies at least a portion of the first extension region, the first control conductor configured to control conduction in the first extension region; and a second control conductor that overlies at least a portion of the second extension region, the second control conductor configured to control conduction in the second extension region, wherein the first and second control conductors are electrically isolated within the semiconductor device from the gate conductor.

Semiconductor device having control conductors

Aspects of the present disclosure are directed toward apparatuses, methods, and systems that include at least two regions of a first semiconductor material and at least two regions of second semiconductor material that are alternatively interleaved. Additionally, the apparatuses, methods, and systems include a first electrode and a second electrode that can operate both as a source and drain. The apparatuses, methods, and systems also include a first gate electrode having multiple portions on the first semiconductor material and a second gate electrode having multiple portions on the second semiconductor material that bidirectionally control current flow between the first electrode and the second electrode.

Apparatuses and methods including a superjunction transistor

A light sensor device comprises a substrate () having a well () defined in one surface. At least one light sensor () is formed at the base of the well (), and an optical light guide () in the form of a transparent tunnel () within an opaque body () extends from a top surface of the device down a sloped side wall of the well () to the location of the light sensor ().

Light sensor device and manufacturing method

Disclosed herein is a method of detecting an LED failure in a series-connected string of LEDs using a parameter indicative of a voltage difference between a voltage across the string at a predetermined relatively high current and a voltage across the string at a predetermined relatively low current. The disclosure extends to controllers configured to detect an LED failure in a string of LEDs, to LED lighting units comprising such controllers, and to lighting subsystems, for instance automobile lighting subsystems.

Method of detecting a LED failure, a controller therefor, a lighting unit and lighting system

A display device comprises a substrate which carries an array of pixels. Each pixel comprises an array of apertures in the substrate, each aperture of the array having a maximum opening dimension less than the wavelength of the light to be transmitted through the aperture. The effective dielectric constant of the aperture and/or the dielectric constant of the substrate is varied, thereby to vary the light transmission characteristics of the pixel between transmission of at least one frequency in the visible spectrum and transmission of substantially no frequency in the visible spectrum.

Display device

A method of determining the dominant output wavelength of an LED, includes determining an electrical characteristic of the LED which is dependent on the voltage-capacitance characteristics, and analyzing the characteristic to determine the dominant output wavelength.

Lighting unit with compensation for output frequency, and method for determining output frequency

A method of providing a dielectric material () having regions () with a varying thickness in an IC manufacturing process is disclosed. The method comprises forming a plurality of patterns in respective regions () of the dielectric material (), each pattern increasing the susceptibility of the dielectric material () to a dielectric material removal step by a predefined amount and exposing the dielectric material () to the dielectric material removal step. In an embodiment, the IC comprises a plurality of pixilated elements () and a plurality of light interference elements (), each comprising a first mirror element () and a second mirror element (), a region of the dielectric material () separating the first mirror element () and the second element (), and each being arranged over one of said pixilated elements (), the method further comprising forming the respective first mirror elements () in a dielectric layer () over a substrate () comprising the plurality of pixilated elements; depositing the dielectric material over the dielectric layer; and forming the respective second mirror elements such that each second mirror element is separated from a respective first mirror element by a region of the exposed dielectric material. Hence, an IC having a layer of a dielectric material () comprising regions of different thicknesses can be obtained requiring only a few process steps.

Integrated circuit manufacturing method

A lighting system for exterior lights of an automobile comprises a first lighting unit () primarily for outputting a first automotive light signal and a failure detection system () for detecting a failure of the first lighting unit (). A second lighting unit is primarily for outputting a second automotive light signal. The second lighting unit comprises an LED light unit. A controller () is adapted to determine if there is failure of the first lighting unit, and if there is failure of the first lighting unit, to use the second lighting unit to generate the first automotive light signal. This is in response to an output request from the first lighting unit ().

Exterior vehicle lights

A method is disclosed of controlling a LED, comprising driving the LED with a DC current for a first time, interrupting the DC current for a second time such that the first time and the second time sum to a period, determining at least one characteristic of the LED while the DC current is interrupted, and controlling the DC current during a subsequent period in dependence on the at least one characteristic. The invention thus benefits from the simplicity of DC operation. By operating at the LED in a DC mode, rather than say in a PWM mode, the requirement to be able to adjust the duty cycle is avoided. By including interruptions to the DC current, it is possible to utilize the LED itself to act as a sensor in order to determine a characteristic of the LED. The need for additional sensors is thereby avoided.

Method of controlling an LED, and an LED controller

A method of estimating the junction temperature of a light emitting diode comprises driving a forward bias current through the diode, the current comprising a square wave which toggles between high and low current values (I, l), the high current value (l) comprising an LED operation current, and the low current value (I) comprising a non-zero measurement current. The forward bias voltage drop (Vf) is sampled and the forward bias voltage drop (Vf) is determined at the measurement current (I)&#x2014;The temperature is derived from the determined forward bias voltage drop.

System and method for estimating the junction temperature of a light emitting diode

A method of estimating the output light flux of a light emitting diode, comprises applying a drive current waveform to the LED over a period of time comprising a testing period. The forward voltage across the LED is monitored during the testing period, and the output light flux is estimated as a function of changes in the forward voltage.

System and method for output flux measurement of light emitting diode

The present invention relates to a FinFET with separate gates and to a method for fabricating the same. A dielectric gate-separation layer between first and second gate electrodes has an extension in a direction pointing from a first to a second gate layer that is smaller than a lateral extension of the fin between its opposite lateral faces. This structure corresponds with a processing method that starts from a covered basic FinFET structure with a continuous first gate layer, and proceeds to remove parts of the first gate layer and of a first gate-isolation layer through a contact opening to the gate layer. Subsequently, a replacement gate-isolation layer that at the same time forms the gate separation layer fabricated, followed by filling the tunnel with a replacement gate layer and a metal filling.

FinFET with separate gates and method for fabricating a finFET with separate gates

The present invention relates to a luminescent component () and a manufacturing method thereof. The luminescent component () comprises a first transparent carrier (), a second transparent carrier (), a substrate () sandwiched between said transparent carriers (), the substrate () comprising a conduit from the first transparent layer () to the second transparent carrier (), the conduit being filled with a luminescent solution (). This facilitates the use of colloidal solutions of quantum dots in such a luminescent component (). Preferably, the substrate () is direct bonded to the transparent carriers () using direct wafer bonding techniques.

Luminescent component and manufacturing method

The present invention relates to a manufacturing method of an integrated circuit (IC) comprising a substrate () comprising a pixelated element () and a light path () to the pixelated element (). The IC comprises a first dielectric layer () covering the substrate () but not the pixilated element (), a first metal layer () covering a part of the first dielectric layer (), a second dielectric layer () covering a further part of first dielectric layer (), a second metal layer () covering a part of the second dielectric layer () and extending over the pixelated element () and a part of the first metal layer (), the first metal layer () and the second metal layer () forming an air-filled light path () to the pixelated element (). The air-filled light path () is formed by creation of holes in the first dielectric layer () and the second dielectric layer (), filling the holes with sacrificial materials, and removal of the sacrificial materials after deposition and patterning of the second metal layer (). This yields an IC having a low-loss light path to the pixelated element (). The light path may act as a color filter, e.g. a Fabry-Perot color filter.

Growing community of inventors

Roosbeek, Belgium

Radu Surdeanu