Ams Sensors Singapore Pte. Ltd.

Ams International Ag

Radoslaw Marcin Gancarz

Miguel Bruno Vaello Paños

Stephan Beer

David Stoppa

Daniel Furrer

Daniele Perenzoni

A method for operating a time-of-flight sensor system includes by an array of pixels of a time-of-flight sensor of the time-of-flight sensor system, generating signal data representative of reflected light from an environment; generating an intensity representation of an object in the environment based on the signal data representative of the reflected light from the environment; determining that the intensity representation indicates that an object in the environment includes a target object; and responsive to the determining, generating a three-dimensional representation of the environment based on the data representative of the reflected light.

Three dimensional imaging with intensity information

An imaging device includes a focal plane array of demodulation pixel cells. Each of the demodulation pixel cells includes a pinned photodiode, demodulation gates operable to demodulate optical signals sensed by the pinned photodiode and to transfer accumulated photo-charges to a respective one of a multitude of sense nodes, a readout circuit operable selectively to read out signals from the sense nodes, and a background light suppression circuit including cross-coupled current mirrors.

Pinned photodiode pixels including current mirror-based background light suppression, and imaging devices including the same

An imaging device, including a monolithic semiconductor integrated circuit substrate, comprises a focal plane array of pixel cells. Each one of the pixel cells includes a gate overlying a region of the substrate operable to convert incident radiation into charge carriers. The pixel also includes a CMOS readout circuit including at least one output transistor in the substrate. The pixel further includes a charge coupled device section on the substrate adjacent the gate, the charge coupled device section including a sense node to receive charge carriers transferred from the region of the substrate beneath the gate. The sense node is coupled to the output transistor. The pixel also includes a reset switch coupled to the sense node. The pixel's charge coupled device section has a buried channel region. The pixel also includes one or more bias enabling switches operable to enable a bias voltage to be applied to the gate. At least one of the reset switch or the one or more bias enabling switches is formed in the buried channel region.

Growing community of inventors

Adliswil, Switzerland

Radoslaw Marcin Gancarz