Nxp B.v.

Ampleon Netherlands B.v.

Dsp Group Switzerland Ag

Radjindrepersad Gajadharsing

Stephan Jo Cecile Henri Theeuwen

Thomas Christian Roedle

Petra Christina Anna Hammes

Igor Blednov

Yi Zhu

Leonardus Cornelis Nicolaas De Vreede

Marco Johannes Pelk

Hendrikus Ferdinand Franciscus Jos

Weng Chuen Edmund Neo

Ji Zhao

Junlei Zhao

Thomas C Roedle

Example embodiments relate to Doherty amplifiers. One example includes a radiofrequency (RF) power amplifier. The RF power amplifier includes an input lead. The RF power amplifier also includes a first output lead. Additionally, the RF power amplifier includes a first semiconductor die arranged in between the input lead and the first output lead. The first semiconductor die includes a first edge arranged adjacent to the input lead and an opposing second edge arranged adjacent to the first output lead. Further, the RF power amplifier includes a field-effect transistor integrated on the first semiconductor die. The field-effect transistor includes a gate bondpad assembly and a drain bondpad assembly. The field-effect transistor also includes a plurality of gate bondwires and a plurality of drain bondwires. In addition, the field-effect transistor includes a plurality of gate fingers extending in a first direction and a plurality of drain fingers extending in a second direction.

Doherty amplifier

A device including a Doherty amplifier, the Doherty amplifier having an amplifier input and output. At least one main amplifier is coupled to the input via a main input impedance and to the output via a main output impedance and additional amplifiers, each amplifier being coupled to the input via respective additional input impedances. Each additional amplifier has a respective additional amplifier output coupled to a respective pair of additional impedances connected in series and having a respective connection node between them. The device also has a first additional amplifier having their respective additional impedances coupled between its respective output and the amplifier output, the pair of additional impedances having first and second impedances, the first impedance being connected to the respective additional amplifier output and to the connection node, the second impedance being coupled between their respective connection node and the connection node of the previous additional amplifier.

N way Doherty amplifier

An electronic device comprising a field-effect transistor having an inter digitated structure suitable for high-frequency power applications, and having multiple threshold voltages that are provided in different regions of each a segment of the interdigitated structure. This leads to a dramatic improvement in linearity over a large power range in the back-off region under class AB signal operation.

Electronic device comprising a field effect transistor for high-frequency applications

A 3-way Doherty amplifier has an amplifier input and an amplifier output. The amplifier has a main stage, a first peak stage and a second peak stage. The amplifier has an input network connecting the amplifier input to the inputs of the stages, and an output network connecting the stages to the amplifier output. The output network implements a phase shift of 90&#xb0; between the output of the main stage and the amplifier output; a phase shift of 180&#xb0; between the output of the first peak stage and the amplifier output; and a phase shift of 90&#xb0; between the third output and the amplifier output.

3-way Doherty amplifier with minimum output network

A radio frequency power amplifier has first and second amplifier stages coupled in series, one of which is operated in class F and the other is operated in inverse class F; an envelope detector adapted to detect an envelope of the input signal; a power supply coupled to supply an electrical supply voltage to the first and second amplifier stages, wherein the electrical supply voltage is controlled to follow the envelope of the input signal. Such amplifier makes it possible to maintain class F and inverse class F operation, respectively, of the first and second amplifier stages independent on the input signal. Preferably, this is done by controlling the electrical supply voltage so that the saturation levels of the first and second amplifier stages follow the envelope of the input signal.

Power amplifier

The invention relates to in particular a lateral DMOST with a drain extension (). In the known transistor a further metal strip () is positioned between the gate electrode contact strip and the drain contact () which is electrically connected with the source region contact (). In the device proposed here, the connection between the further metal strip () and the source contact () comprises a capacitor () and the further metal strip () is provided with a further contact region () for delivering a voltage to the further metal strip (). In this way an improved linearity is possible and the usefulness of the device is improved in particular at high power and at high frequencies. Preferably the capacitor () is integrated with the transistor in a single semiconductor body (). The invention further comprises a method of operating a device () according to the invention.

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Nijmegen, Netherlands

Radjindrepersad Gajadharsing