Semiconductor Components Industries, LLC

Radim Spetik

Michael John Seddon

Bruce Greenwood

Ladislav Seliga

Santosh Menon

Robert Davis

A method includes forming a plurality of pockets of semiconductor material in a semiconductor substrate. The plurality of pockets are electrically isolated from the semiconductor substrate. The method further involves forming a metal-oxide-semiconductor field-effect transistor (MOSFET) in a pocket of the plurality of pockets, the MOSFET being a vertical trench shielded gate MOSFET. The method further includes forming an electrical connection to a drain region of the MOSFET vertically below a trench and a mesa of the MOSFET.

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Roznov pod Radhostem, Czechia

Radim Spetik